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Chemical vapor deposition of titanium nitride thin films from tetrakis(dimethylamido)titanium and hydrazine as a coreactant

Published online by Cambridge University Press:  31 January 2011

Carmela Amato-Wierda  and
Derk A. Wierda
Carmela Amato-Wierda*
Affiliation:
Materials Science Program, University of New Hampshire, Durham, New Hampshire 03824
Derk A. Wierda
Affiliation:
Department of Chemistry, Saint Anselm College, Manchester, New Hampshire 03102
*
a)Address all correspondence to this author.
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Abstract

Hydrazine was used as a coreactant with tetrakis(dimethylamido)titanium for the low-temperature chemical vapor deposition of TiN between 50 and 200 °C. The TiN film-growth rates ranged from 5 to 45 nm/min. Ti:N ratios of approximately 1:1 were achieved. The films contain between 2 and 25 at.% carbon, as well as up to 36 at.% oxygen resulting from diffusion after air exposure. The resistivity of these films is approximately 104 μΩ cm. Annealing the films in ammonia enhances their crystallinity. The best TiN films were produced at 200 °C from a 2.7% hydrazine–ammonia mixture. The Ti:N ratio of these films is approximately 1:1, and they contain no carbon or oxygen. These films exhibit the highest growth rates observed.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 11 , November 2000 , pp. 2414 - 2424
Copyright
Copyright © Materials Research Society 2000

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