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Chemical vapor deposition of cobalt using novel cobalt(I) precursors

Published online by Cambridge University Press:  31 January 2011

Hyungsoo Choi ,
Sungho Park  and
Ho G. Jang
Hyungsoo Choi*
Affiliation:
Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, Illinois 61801
Sungho Park
Affiliation:
Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, Illinois 61801
Ho G. Jang
Affiliation:
Division of Chemistry and Molecular Engineering, Korea University, Seoul, Korea
*
a) Address all correspondence to this author.
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Abstract

The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR)3]4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 2 , February 2002 , pp. 267 - 270
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1.Maex, K., Lauwers, A., Besser, P., Kondoh, E., Potter, M. de, and Steegen, A., IEEE Trans. Electron Devices 46, 1545 (1999); K. Goto, A. Fushida, J. Watanabe, T. Sukegawa, Y. Tada, T. Nakamura, T. Yamazaki, and T. Sugii, IEEE Trans. Electron Devices 46, 117 (1999).CrossRefGoogle Scholar
2.Lindsay, R., Lauwers, A., Potter, M. de, Roelandts, N., Vrancken, C., and Maex, K., Microelectron. Eng. 55, 157 (2001).CrossRefGoogle Scholar
3.Biró, L.P., Molnár, G., Szabó, I., Vértesy, Z., Horváth, Z.E., Gyulai, J., Kónya, Z., Piedigrosso, P., Fonseca, A., Nagy, J.B., and Thiry, P.A., Appl. Phys. Lett. 76, 706 (2000).Google Scholar
4.Mao, J.M., Sun, L.F., Qian, L.X., Pan, Z.W., Chang, B.H., Zhou, W.Y., Wang, G., and Xie, S.S., Appl. Phys. Lett. 72, 3297 (2000).CrossRefGoogle Scholar
5.Shah, S.A., Rotkina, L., Choi, H., and Lyding, J.W., Abstract Book, American Vacuum Society 47th International Symposium, Boston, MA, October, 2000, p. 44.Google Scholar
6.Gross, M.E., Kranz, K.S., Brasen, D., and Luftman, H.J., Vac. Sci. Technol. B 6, 1548 (1988).CrossRefGoogle Scholar
7.Maruyama, T., Jpn. J. Appl. Phys. 36, L705 (1997).CrossRefGoogle Scholar
8. G.Dormans, J.M., Meekes, G.J.B.M., and Staring, E.G.J., J. Crystal Growth 114, 364 (1991).CrossRefGoogle Scholar
9.Lane, P.A., Oliver, P.E., Wright, P.J., Reeves, C.L., Pitt, A.D., and Cockayne, B., Chem. Vap. Deposition 4, 183 (1998).3.0.CO;2-M>CrossRefGoogle Scholar
10.Ivanova, A.R., Nuesca, G., Chen, X., Goldberg, C., Kaloyeros, A.E., Arkles, B., and Sullivan, J.J., J. Electrochem. Soc. 146, 2139 (1999).CrossRefGoogle Scholar
11.Baev, A.K., Gubar, Yu.L., and Gasanov, K.S., Russ. J. Phys. Chem. 56, 1490 (1982).Google Scholar
12.Mutterties, E.L. and Hirsekorn, F.J., J. Am. Chem. Soc. 96, 7920 (1974).CrossRefGoogle Scholar