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Chemical vapor deposition of aluminum nitride thin films

Published online by Cambridge University Press:  31 January 2011

Roy G. Gordon ,
Umar Riaz  and
David M. Hoffman
Roy G. Gordon
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138
Umar Riaz
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138
David M. Hoffman
Affiliation:
Department of Chemistry, University of Houston, Houston, Texas 77204
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Abstract

The atmospheric pressure chemical vapor deposition of aluminum nitride coatings from hexakis(dimethylamido)dialuminum, Al2(N(CH3)2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, Rutherford backscattering, and forward recoil spectrometry. The films were deposited at 100–500 °C with growth rates up to 1500 Å/min. The films showed good adhesion to silicon, glass, and quartz substrates and were chemically inert. Rutherford backscattering analysis revealed that the N/Al ratio was 1.15 ± 0.05 for films deposited at 100–200 °C and 1.05 ± 0.05 for those deposited at 300–500 °C. Films deposited at 100–200 °C had refractive indexes in the range 1.65–1.80 whereas indexes for films deposited at 300–400 °C were 1.86–2.04. The films were transparent in the visible region. The optical bandgap varied from 5.0 eV for films deposited at 100 °C to 5.77 eV for those deposited at 500 °C. Films deposited at 100–200 °C were amorphous whereas those deposited at 300–500 °C were polycrystalline.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 7 , July 1992 , pp. 1679 - 1684
Copyright
Copyright © Materials Research Society 1992

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