Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Cook, M. J.
Wu, P. K.
Patibandla, N.
Hillig, W. B.
and
Hudson, J. B.
1993.
Deposition and Properties of AlN Films Prepared by Low Pressure CVD with a Metalorganic Precursor.
MRS Proceedings,
Vol. 335,
Issue. ,
Gordon, Roy G.
1993.
Recent Advances in the CVD of Metal Nitrides and Oxides.
MRS Proceedings,
Vol. 335,
Issue. ,
Chiu, Hsin-Tien
and
Chuang, Shiow-Huey
1993.
Tungsten nitride thin films prepared by MOCVD.
Journal of Materials Research,
Vol. 8,
Issue. 6,
p.
1353.
Hoffman, David M.
1994.
Chemical vapour deposition of nitride thin films.
Polyhedron,
Vol. 13,
Issue. 8,
p.
1169.
Liu, Herng
Bertolet, D.C.
and
Rogers, J.W.
1994.
The surface chemistry of aluminum nitride MOCVD on alumina using trimethylaluminum and ammonia as precursors.
Surface Science,
Vol. 320,
Issue. 1-2,
p.
145.
Jimenez, C.
Gilles, S.
Doppelt, P.
Bernard, C.
and
Madar, R.
1995.
Preparation of aluminum nitride films by low pressure organometallic chemical vapor deposition.
Surface and Coatings Technology,
Vol. 76-77,
Issue. ,
p.
372.
Watanabe, Yoshihisa
Nakamura, Yoshikazu
Hirayama, Shigekazu
and
Naota, Yuusaku
1995.
Microstructure and Optical Properties of Aluminum Nitride Thin Films.
MRS Proceedings,
Vol. 403,
Issue. ,
Getman, Thomas D.
and
Franklin, Gary W.
1995.
Single Source Precursors to Group III (13) Metal Nitrides.
Comments on Inorganic Chemistry,
Vol. 17,
Issue. 2,
p.
79.
Kidder, J.N.
Kuo, J. S.
Pearsall, T.P.
and
Rogers, J.W.
1995.
AlN Films Deposited by LP-MOCVD Atomic Layer Deposition at Lower Temperatures Using DMEAA and Ammonia.
MRS Proceedings,
Vol. 395,
Issue. ,
Weiller, Bruce H.
1996.
Chemical Vapor Deposition of TiN from Tetrakis(dimethylamido)titanium and Ammonia: Kinetics and Mechanistic Studies of the Gas-Phase Chemistry.
Journal of the American Chemical Society,
Vol. 118,
Issue. 21,
p.
4975.
Stauden, Th.
Eichhorn, G.
Cimalla, V.
Pezoldt, J.
and
Ecke, G.
1996.
The deposition of aluminum nitride on silicon by plasma-enhanced metal-organic chemical vapour deposition.
Diamond and Related Materials,
Vol. 5,
Issue. 10,
p.
1210.
Barron, Andrew R.
1996.
CVD of Nonmetals.
p.
261.
Riihelä, Diana
Ritala, Mikko
Matero, Raija
Leskelä, Markku
Jokinen, Janne
and
Haussalo, Pekka
1996.
Low temperature deposition of AIN films by an alternate supply of trimethyl aluminum and ammonia.
Chemical Vapor Deposition,
Vol. 2,
Issue. 6,
p.
277.
Sakuragi, Yoshifumi
Watanabe, Yoshihisa
Nakamura, Yoshikazu
and
Amamoto, Yoshiki
1996.
Changes in Optical Transmittance of Aluminum Nitride thin Films Exposed to Air.
MRS Proceedings,
Vol. 449,
Issue. ,
Chung, J-W.
and
Ohuchi, F.S.
1996.
Deposition of AlN on WS2 (0001) Substrate by Atomic Layer Growth Process.
MRS Proceedings,
Vol. 449,
Issue. ,
Tirira, Jorge
Serruys, Yves
and
Trocellier, Patrick
1996.
Forward Recoil Spectrometry.
p.
299.
Gilles, S.
Bourhila, N.
Ikeda, S.
Bernard, C.
and
Madar, R.
1997.
Deposition of (Ti,Al)N thin films by organometallic chemical vapor deposition: thermodynarnic predictions and experimental results.
Surface and Coatings Technology,
Vol. 94-95,
Issue. ,
p.
285.
Kidder,, J. N.
Yun, H. K.
Rogers,, J. W.
and
Pearsall, T. P.
1998.
Chemical Composition of AlN Thin Films Deposited at 523−723 K Using Dimethylethylamine Alane and Ammonia.
Chemistry of Materials,
Vol. 10,
Issue. 3,
p.
777.
Ecke, G.
Eichhorn, G.
Pezoldt, J.
Reinhold, C.
Stauden, T.
and
Supplieth, F.
1998.
Deposition of aluminium nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition.
Surface and Coatings Technology,
Vol. 98,
Issue. 1-3,
p.
1503.
Watanabe, Y.
1998.
Aluminium nitride thin films prepared by ion beam assisted deposition method.
Surface Engineering,
Vol. 14,
Issue. 5,
p.
427.