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Chemical deterioration of Al film prepared on CF4 plasma-etched LiNbO3 surface

Published online by Cambridge University Press:  31 January 2011

Hirotoshi Nagata ,
Yasuyuki Miyama ,
Naoki Mitsugi  and
Kaori Shima
Hirotoshi Nagata*
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-8601, Japan
Yasuyuki Miyama
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-8601, Japan
Naoki Mitsugi
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-8601, Japan
Kaori Shima
Affiliation:
Advanced Materials Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-8601, Japan
*
a)Address correspondence to this author.[email protected]
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Abstract

The fabrication process of an Al thin-film optical polarizer on LiNbO3 waveguides after CF4 plasma dry etching of a previously deposited SiO2 buffer layer was investigated. The problem in this process is a precipitation of compounds containing C, O, F, and Li on the etched LiNbO3 surface and a chemical deterioration of the Al caused by a reaction with these precipitates. Most notably, the growth of amorphous phase in addition to the crystalline Al metal grains and a partial oxidization of Al were found at the interface using transmission electron microscopy and x-ray photoelectron spectroscopy.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 2 , February 2000 , pp. 476 - 482
Copyright
Copyright © Materials Research Society 2000

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References

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