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Characterization of PbTiO3 thin films deposited on Pt/Ti/SiO2/Si substrates by ECR PECVD

Published online by Cambridge University Press:  03 March 2011

Sung-Woong Chung
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305 701, South Korea
Jung-Shik Shin
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305 701, South Korea
Jae-Whan Kim
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305 701, South Korea
Kwangsoo No
Affiliation:
Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
Sung-Soon Chun
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
Won-Jong Lee
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea
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Abstract

The electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method is used to prepare ferroelectric PbTiO3 films. Single-phase perovskite PbTiO3 films with smooth surfaces and fine grain size were successfully fabricated on Pt/Ti/SiO2/Si substrates at low temperatures of 400–500 °C using metal-organic (MO) sources. The chemical compositions, structural phases, surface morphologies, and depth profiles of the PbTiO3 thin films were investigated using EDS, XRD, SEM, RBS, and AES. Variations of those properties with process temperature and gas supply ratio are discussed. When the process temperature was above 450 °C, the stoichiometric perovskite PbTiO3 films could be obtained even though the MO source supply ratio was varied in a wide range if the oxygen supply was sufficient.

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Articles
Copyright
Copyright © Materials Research Society 1995

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References

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