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Characterization of interface states in (Sr, Ca)TiO3−x based ceramics by ICTS analysis

Published online by Cambridge University Press:  31 January 2011

Yoshitaka Nakano
Affiliation:
Department of Materials Science and Engineering, School of Science and Engineering, Waseda University, 4–1, Ohkubo 3-chome, Shinjuku-ku, Tokyo 169, Japan
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Abstract

Isothermal capacitance transient spectroscopy measurements were performed to study the reoxidizing induced change in interface states in (Sr, Ca)TiO3−x based ceramics. A discrete acceptor type trap level was detected with reoxidation below the oxidation temperature of grain surfaces, but two deep levels were detected with reoxidation above this temperature. These ICTS results are in good agreement with the previous report with the DLTS measurements. These interface states are considered to originate from chemisorbed oxygen (O2−, O) on grain surfaces. The O and O2− chemisorption levels contribute to the non-ohmic conduction with reoxidizing anneals below and above the oxidation temperature, respectively.

Type
Articles
Copyright
Copyright © Materials Research Society 1991

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References

1.Fujimoto, M., Chiang, Y-M., Roshko, A., and Kingery, W. D., J. Am. Ceram. Soc. 68, C300 (1985).Google Scholar
2.Eda, K. and Matsuoka, M., Jpn. J. Appl. Phys. 16, 195 (1977).CrossRefGoogle Scholar
3.Cordaro, J. F., Shim, Y., and May, J. E., J. Appl. Phys. 60, 4186 (1986).CrossRefGoogle Scholar
4.Shim, Y. and Cordaro, J. F., J. Am. Ceram. Soc. 71, 184 (1988).CrossRefGoogle Scholar
5.Shohata, N., Matsumura, T., and Ohno, T., Jpn. J. Appl. Phys. 19, 1793 (1980).CrossRefGoogle Scholar
6.Tsuda, K. and Mukae, K., in High Tech Ceramics, edited by Vincenzini, P. (Elsevier Science Publishers B. V., Amsterdam, 1987), Part B, p. 1781.Google Scholar
7.Nakano, Y. and Ichinose, N., J. Mater. Res. 5, 2910 (1990).CrossRefGoogle Scholar
8.Okushi, H. and Tokumaru, Y., Jpn. J. Appl. Phys. 19, L335 (1980).CrossRefGoogle Scholar
9.Tsuda, K. and Mukae, K., Proceedings of Fall Meeting of the Ceramic Society of Japan, p. 37 (1988). [in Japanese]Google Scholar
10.Maeda, T., Meguro, S., and Takata, M., Jpn. J. Appl. Phys. 28, L714 (1989).CrossRefGoogle Scholar
11.Tanaka, J., Hishita, S., and Okushi, H., J. Am. Ceram. Soc. 73, 1425 (1990).CrossRefGoogle Scholar
12.Ganbino, J. P., Kingery, W. D., Pike, G. E., Philipp, H. R., and Levinson, L. M., J. Appl. Phys. 61, 2571 (1987).CrossRefGoogle Scholar