Hostname: page-component-f554764f5-rvxtl Total loading time: 0 Render date: 2025-04-10T03:38:15.889Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of copper films produced via atomic layer deposition

Published online by Cambridge University Press:  31 January 2011

Jinshan Huo ,
Raj Solanki  and
James McAndrew
Jinshan Huo
Affiliation:
Department of Electrical and Computer Engineering, OGI School of Science and Engineering at OHSU, Beaverton, Oregon 97006
Raj Solanki
Affiliation:
Department of Electrical and Computer Engineering, OGI School of Science and Engineering at OHSU, Beaverton, Oregon 97006
James McAndrew
Affiliation:
American Air Liquide, Chicago Research Center, Countryside, Illinois 60525
Get access

Abstract

Properties of copper films produced using atomic layer deposition (ALD) were characterized. Composition, morphology, and electrical properties of these films grown on glass, as well as Ta, TiN, and TaN on silicon wafers were examined. The resistivity of films thicker than about 60 nm was near bulk value. Films were deposited using a two-step ALD process in which copper(II)-1,1,1,5,5,5,-hexafluoroacetylacetonate hydrate and water vapor were introduced in the first step and a reducing agent was introduced in a subsequent step. Five reducing agents were evaluated, with the best results obtained using isopropanol or formalin. The optimum deposition temperature with isopropanol was about 260 °C, whereas it was about 300 °C with formalin. These films were also investigated as seed layers for electrodeposition of thicker Cu layers for possible interconnect applications. Excellent fills in high aspect ratio trenches were demonstrated.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 9 , September 2002 , pp. 2394 - 2398
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Solanki, R. and Pathangey, B., Electrochem. Solid-State Lett. 3, 479 (2000).CrossRefGoogle Scholar
2.Kodas, T.T. and Hampden-Smith, M.J., The Chemistry of Metal CVD (VCH, New York, 1994), Chap. 4.CrossRefGoogle Scholar
3.Juppo, M., Ritala, M., and Leskela, M., J. Vac. Sci. Technol. A15, 2330 (1997).CrossRefGoogle Scholar
4.Martensson, P. and Carlsson, J.O., Chem. Vap. Dep. 3, 45 (1997).CrossRefGoogle Scholar
5.Martensson, P. and Carlsson, J.O., J. Electrochem. Soc. 145, 2926 (1998).CrossRefGoogle Scholar
6.Awaya, N. and Arita, Y., Jpn. J. Appl. Phys. 32, 3915 (1993).CrossRefGoogle Scholar
7.Lecohier, B., Philipoz, R.K., Calplini, B., Stumm, T., and Bergh, H. Van den, J. Phys. Suppl. 1, 287 (1991).Google Scholar
8.Zeng, B., Eisenbraum, E.T., Liu, J., and Kalayeros, A.E., Appl. Phys. Lett., 61, 2175 (1992).CrossRefGoogle Scholar
9.Cohen, S.L., Liehr, M., and Kasi, S., Appl. Phys., Lett. 60, 50 (1992).CrossRefGoogle Scholar
10.Awaya, N., Ohno, K., and Arita, Y., J. Electrochem. Soc. 142, 3173 (1995).CrossRefGoogle Scholar
11.Chiang, C-M., Miller, T.M., Dubois, L.H., J. Phys. Chem. 97, 11781 (1993).CrossRefGoogle Scholar
12.Lecohier, B., Calpini, B., Philippoz, J-M., and Bergh, H. van den, J. Appl. Phys. 72, 2022 (1992).CrossRefGoogle Scholar
13.Lecohier, B., Calpini, B., Philippoz, J-M., and Bergh, H. van den, Appl. Phys. Lett. 60, 3114 (1992).CrossRefGoogle Scholar
14.Rousseau, F., Jain, A., Kodas, T.T., Hampden-Smith, M., Farr, J.D., and Muenchausen, R., J. Mater. Chem. 2, 893 (1992).CrossRefGoogle Scholar
15.Ashcroft, N.W. and Mermin, N.D., Solid State Physics (Holt, Rinehart, and Winston, New York, 1976), p. 52.Google Scholar