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Bombarding energy dependence of bonding structure in amorphous carbon interlayer and its effect on diamond nucleation

Published online by Cambridge University Press:  31 January 2011

U. C. Oh ,
De Gang Cheng ,
Fan Xiu Lu  and
Jung Ho Je
U. C. Oh
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology Beijing, Xueyuan Lu 30, Haidain Qu, Beijing 100083, People's Republic of China and Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hoyja Dong, Pohang, Kyungbuk 790–784, Republic of Korea
De Gang Cheng
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology Beijing, Xueyuan Lu 30, Haidain Qu, Beijing 100083, People's Republic of China
Fan Xiu Lu
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology Beijing, Xueyuan Lu 30, Haidain Qu, Beijing 100083, People's Republic of China
Jung Ho Je*
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hoyja Dong, Pohang, Kyungbuk 790–784, Republic of Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The bombarding energy dependence of bonding structure in amorphous carbon interlayer and its effect on diamond nucleation density (Nd) were studied. Amorphous carbon (a-C) interlayer was deposited by magnetron sputtering. Interestingly, the intensity ratio (ID/IG) of the D band (∼1400 cm−1) to the G band (∼1570 cm−1) in the Raman spectra and the optical band gap of the a-C film were found to be inversely proportional to the sputtering power, that is, to bombarding energy. When diamond was subsequently deposited at 800 °C by microwave plasma chemical vapor deposition (CVD), diamond could be grown only on the interlayers with higher ID/IG (≥2.20), and Nd was increased up to 2 × 106/cm2 with the increase of ID/IG ratio, that is, with the decrease of the bombarding energy. We experimentally confirmed that the amount of the sp3 bonded carbon clusters within the interlayer was dependent on the bombarding energy of the particles, determining the diamond nucleation density. We suggest that the transformation of the amorphous carbon into graphitic carbon should be effectively prevented for the diamond nucleation on the a-C interlayer.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 2029 - 2035
Copyright
Copyright © Materials Research Society 1999

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