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Base electrodes for high dielectric constant oxide materials in silicon technology

Published online by Cambridge University Press:  31 January 2011

A. Grill ,
W. Kane ,
J. Viggiano ,
M. Brady  and
R. Laibowitz
A. Grill
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
W. Kane
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
J. Viggiano
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
M. Brady
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
R. Laibowitz
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

Several conductive structures which appeared to be usable as base electrodes in VLSI capacitors based on high dielectric materials have been annealed in oxygen at 650 °C. The studied structures were Pt/TiN, Pt/Ta, Au/TiN, Ru, and RuO2/Ru, prepared under a variety of conditions. The structures have been studied by Rutherford backscattering (RBS) and Auger Electron Spectroscopy (AES). It was found that none of the pure metals, Pt, Au, or Ru, can prevent the diffusion of oxygen to the underlying layer and its oxidation, thus causing a possible break in the electrical conduction path to the silicon substrate. Of the investigated materials, in the thickness range ≤ 110 nm only the RuO2/Ru couple preserved its electrical connectivity to the Si substrate and prevented diffusion of silicon to the surface of the electrode.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 12 , December 1992 , pp. 3260 - 3265
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1Okuyama, M. and Hamakawa, Y., Int. J. Eng. Sci. 29 (3), 391–400 (1991).Google Scholar
2Haertling, G. H., J. Vac. Sci. Technol. A 9 (3, pt. 1), 414 (1991).Google Scholar
3Koyama, K., Sakuma, T., Yamamichi, S., Watanabe, H., Aoki, H., Ohya, S., Miyasaka, Y., and Kikkawa, T., IEEE IEDM 91 91, 823 (1991).Google Scholar
4Sayer, M., IEEE Ultrasonics '91 Symposium, Lake Buena Vista, FL, Dec. 8-11, 1991 (1991?).Google Scholar
5Hren, P.D., Rou, S.H., Shareef, H. Al, Ameen, M., Auciello, O., and Kingon, A., Ferroelectrics 116 (1991).Google Scholar
6Bruchhaus, R., Pitzer, D., Eibl, O., Scheithauer, U., and Hoesler, W., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Turtle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1991).Google Scholar
7Ogawa, T., Integrated Ferroelectrics 1, 1 (1992).Google Scholar
8Yamamichi, S., Sakuma, T., Takemura, K., and Miyasaka, Y., Jpn. J. Appl. Phys. 30, 2193 (1991).Google Scholar
9Takemura, K., Proc. 4th Int. Symp. on Integrated Ferroelectrics, Monterey, CA, March 9–11, 1992 (1992).Google Scholar
10Krusin-Elbaum, L., Wittmer, M., and Yee, D. S., Appl. Phys. Lett. 26, 1879 (1987).Google Scholar