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BaRuO3 thin film electrode for ferroelectric lead zirconate titanate capacitors

Published online by Cambridge University Press:  31 January 2011

Sang-Mo Koo ,
Li-Rong Zheng  and
K. V. Rao
Sang-Mo Koo
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44, Stockholm, Sweden
Li-Rong Zheng
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44, Stockholm, Sweden
K. V. Rao
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44, Stockholm, Sweden
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Abstract

The characteristics of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) capacitor on conductive BaRuO3 thin films deposited by pulsed laser deposition (PLD) were investigated. The BaRuO3 layer grown epitaxially on LaAlO3(100) substrates at a substrate temperature of 700 °C was found to have a resistivity around 145 μΩ cm at 300 K. The subsequently deposited PZT film showed a c-axis orientation perpendicular to the substrate, and the remnant polarization, ΔP (= P* – P^), and coercive field, EC, of the capacitor were 24.7 μC/cm2 and 52 kV/cm, respectively. Fatigue characteristics of the PZT on BaRuO3 electrodes are far better than those obtained with polycrystalline PZT with Pt structures and comparable to those on epitaxial Yba2Cu3O7−x electrodes. With the new metallic electrode, the PZT layer exhibits no serious degradation in fatigue endurance up to 1010 cycles.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 14 , Issue 10 , October 1999 , pp. 3833 - 3836
Copyright
Copyright © Materials Research Society 1999

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References

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