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Band gap-tuned MoS2(1−x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process

Published online by Cambridge University Press:  10 August 2017

Yusuke Hibino ,
Seiya Ishihara ,
Naomi Sawamoto ,
Takumi Ohashi ,
Kentarou Matsuura ,
Hideaki Machida ,
Hitoshi Wakabayashi  and
Atsushi Ogura
Yusuke Hibino*
Affiliation:
School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken 214-8571, Japan
Seiya Ishihara
Affiliation:
School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken 214-8571, Japan
Naomi Sawamoto
Affiliation:
School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken 214-8571, Japan
Takumi Ohashi
Affiliation:
School of Engineering Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama-shi, Kanagawa-ken 226-8502, Japan
Kentarou Matsuura
Affiliation:
School of Engineering Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama-shi, Kanagawa-ken 226-8502, Japan
Hideaki Machida
Affiliation:
Gas-Phase Growth Ltd., Tokyo University of Agriculture and Technology, Koganei-shi, Tokyo-to 184-0012, Japan
Hitoshi Wakabayashi
Affiliation:
School of Engineering Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama-shi, Kanagawa-ken 226-8502, Japan
Atsushi Ogura
Affiliation:
School of Science and Technology, Meiji University, Kawasaki-shi, Kanagawa-ken 214-8571, Japan
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

MoS2(1−x)Te2x thin films were fabricated by high-temperature co-sputtering deposition and post-deposition tellurization annealing using novel Te precursor (i-C3H7)2Te for the first time. As a result, high crystal quality MoS2(1−x)Te2x (6.5 nm) were successfully fabricated with the Te concentration x ranging from 0.48 to 0.61 and band gap value from 0.80 to 0.87 eV. From the obtained band gap values of MoS2(1−x)Te2x , the bowing parameter b was determined to be 1.06 eV. When exploited in device use, if the required band gap value is known, the required composition can be calculated with the bowing parameter. We have also shown the compatibility of co-sputtering to alloy fabrication since the composition ratio can be easily controlled just by adjusting the radio frequency (RF) sputter power on different targets. The fabrication method can be applied to different transition metal dichalcogenide materials as well.

Keywords

sputteringX-ray photoelectron spectroscopyalloy
Type
Invited Paper
Information
Journal of Materials Research , Volume 32 , Issue 16 , 28 August 2017 , pp. 3021 - 3028
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Gary L. Messing

References

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