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Atomic transport in Xe-irradiated Ni/SiO2 bilayers

Published online by Cambridge University Press:  31 January 2011

T. Banwell  and
M-A. Nicolet
T. Banwell
Affiliation:
Bellcore, Morristown, New Jersey 07960
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, California 91125
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Abstract

Parametric experiments are described that characterize the process of atomic relocation in Ni/SiO2 bilayers induced by Xe irradiation. The parameters varied are the irradiation temperature (− 196 to + 500 °C) and the Xe irradiation dose (0.01−15 × 1015cm−2). Backscattering spectrometry of the irradiated samples after removal of the unreacted Ni film is the main analytical tool. A phenomenological model is given that describes the results quantitatively. It is deduced that secondary recoil implantation followed by subsequent redistribution within the cascade's lifetime produces the dominant transport mechanism responsible for incorporating Ni into the SiO2.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1072 - 1081
Copyright
Copyright © Materials Research Society 1988

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References

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