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Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes

Published online by Cambridge University Press:  03 March 2011

Oscar van der Straten ,
Yu Zhu ,
Kathleen Dunn ,
Eric T. Eisenbraun  and
Alain E. Kaloyeros
Oscar van der Straten
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, The University at Albany–State University of New York, Albany, New York 12203
Yu Zhu
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, The University at Albany–State University of New York, Albany, New York 12203
Kathleen Dunn
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, The University at Albany–State University of New York, Albany, New York 12203
Eric T. Eisenbraun
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, The University at Albany–State University of New York, Albany, New York 12203
Alain E. Kaloyeros*
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, The University at Albany–State University of New York, Albany, New York 12203
*
a)Address all correspondence to this author.e-mail: [email protected]
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Abstract

A metal–organic thermal atomic layer deposition (ALD) approach was developed for the growth of ultrathin tantalum nitride (TaNx) films by alternate pulses of tert-butylimido trisdiethylamido tantalum (TBTDET) and ammonia (NH3). An optimized ALD process window was established by investigating saturation of film-growth rate versus TBTDET and NH3 exposures, as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (250 °C) ALD process yielded uniform, continuous, and conformal TaNx films with a Ta:N ratio of 1:1. Carbon and oxygen impurity levels were in the 5–8 at.% range. Associated film conformality in 100-nm trench structures with 11:1 aspect ratio was nearly 100%.

Keywords

Chemical vapor deposition (CVD)MicrostructureElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 447 - 453
Copyright
Copyright © Materials Research Society 2004

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