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Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

Published online by Cambridge University Press:  31 January 2011

Mika P. Valkonen ,
Seppo Lindroos ,
Tapio Kanniainen ,
Markku Leskelä ,
Roland Resch ,
Gernot Friedbacher  and
Manfred Grasserbauer
Mika P. Valkonen
Affiliation:
Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland
Seppo Lindroos
Affiliation:
Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland
Tapio Kanniainen
Affiliation:
Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland
Markku Leskelä
Affiliation:
Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland
Roland Resch
Affiliation:
Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna, Austria
Gernot Friedbacher
Affiliation:
Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna, Austria
Manfred Grasserbauer
Affiliation:
Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna, Austria
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Abstract

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 6 , June 1998 , pp. 1688 - 1692
Copyright
Copyright © Materials Research Society 1998

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