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Anomalous low-temperature Raman scattering in a–Si1−xHx

Published online by Cambridge University Press:  03 March 2011

D.M. Bhusari ,
Alka Kumbhar  and
S.T. Kshirsagar
D.M. Bhusari
Affiliation:
National Chemical Laboratory, Pune 411 008, India
Alka Kumbhar
Affiliation:
National Chemical Laboratory, Pune 411 008, India
S.T. Kshirsagar*
Affiliation:
National Chemical Laboratory, Pune 411 008, India
*
a)Author to whom all correspondence should be addressed.
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Abstract

We have reported here on low-temperature Raman scattering measurements on thin films of hydrogenated amorphous silicon (α-Si:H) alloys having different H contents. The Stoke's intensity, 77KITO, scattered at 77 K by the TO-phonon is found to be several times greater than its corresponding magnitude (300KITO) at 300 K. The ratio (77KITO/300KITO) is observed to vary exponentially with an increase in H concentration of the film. After eliminating various possible contributions to the scattering cross section, and therefore to the scattered intensity, this anomalous light scattering at 77 K is attributed to the possibility of polarizability modulation, which is believed to be caused due to a possible reduction in light-induced migration of H in α-Si:H and to the charge-carrier-induced enhancement of electron phonon coupling at 77 K.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 6 , June 1995 , pp. 1362 - 1370
Copyright
Copyright © Materials Research Society 1995

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References

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