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Anisotropic thermal conductivity of rare earth–transition metal thin films

Published online by Cambridge University Press:  31 January 2011

L.J. Shaw-Klein ,
T.K. Hatwar ,
S.J. Burns ,
S.D. Jacobs  and
J.C. Lambropoulos
L.J. Shaw-Klein
Affiliation:
Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627-0133 and Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299
T.K. Hatwar
Affiliation:
Mass Memory Division Research Laboratories, Eastman Kodak Company, Rochester, New York 14650-2017
S.J. Burns
Affiliation:
Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627-0133
S.D. Jacobs
Affiliation:
Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299
J.C. Lambropoulos
Affiliation:
Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627-0133
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Abstract

Thermal conductivity measurements were performed on several amorphous rare earth transition metal thin films of varying microstructure. The thermal conductivity perpendicular to the plane of the film, measured by the thermal comparator method, was compared with the thermal conductivity value measured parallel to the plane of the film. The latter value was obtained by converting electrical conductivity values to thermal conductivity via the Wiedemann–Franz relationship. As expected, the columnar microstructure induced during the sputter deposition of the thin films causes an anisotropy in the thermal conductivity values, with the in-plane values consistently lower than the out-of-plane values. The effect is most pronounced for the more columnar films deposited at higher pressure, for which the in-plane thermal conductivity, 0.3 W/mK, is an order of magnitude lower than the out-of-plane thermal conductivity, 4.3 W/mK. The thermal conductivity out of the plane of the film decreased with increasing deposition pressure, due to the decreasing film density.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 2 , February 1992 , pp. 329 - 334
Copyright
Copyright © Materials Research Society 1992

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References

1.Garrido, C., Leon, B., and Perez-Amor, M., J. Appl. Phys. 69, 1133 (1991).CrossRefGoogle Scholar
2.Ohtsuki, T., Owa, S., and Yamada, F., Appl. Phys. Lett. 57, 105 (1990).CrossRefGoogle Scholar
3.Bartholomeusz, B. J., J. Appl. Phys. 65, 262 (1989).CrossRefGoogle Scholar
4.Guenther, A. H. and Mclver, J. K., SPIE Proc. 895, 246 (1988).CrossRefGoogle Scholar
5.Lambropoulos, J. C., Jolly, M. R., Amsden, C. A., Gilman, S. E., Sinicropi, M. J., Diakomihalis, D., and Jacobs, S. D., J. Appl. Phys. 66, 4230 (1989).CrossRefGoogle Scholar
6.Morelli, D. T., Beetz, C. P., and Perry, T. A., J. Appl. Phys. 64, 3063 (1988).CrossRefGoogle Scholar
7.Thornton, J. A., SPIE Proc. 821, 95 (1987).CrossRefGoogle Scholar
8.Dirks, A. G. and Leamy, H. J., Thin Solid Films 47, 219 (1977).CrossRefGoogle Scholar
9.Raasch, D. and Klahn, S., J. Magn. Magn. Mater. 93, 365 (1991).CrossRefGoogle Scholar
10.Anderson, R. J., J. Appl. Phys. 67, 6914 (1990).CrossRefGoogle Scholar
11.Takatsuka, Y., Yoneyama, Y., and Yorozu, T., IEEE Trans. Mag. 26, 1909 (1990).CrossRefGoogle Scholar
12.Bartholomeusz, B. J. and Hatwar, T. K., Thin Solid Films 181, 115 (1989).CrossRefGoogle Scholar
13.Lee, J-W., Shieh, H-P. D., Kryder, M. H., and Laughlin, D. E., J. Appl. Phys. 63, 3624 (1988).CrossRefGoogle Scholar
14.Heimburg, R. W. and Tong, K. N., Thermal Conductivity, Proc. 8th Conf., edited by Ho, C. Y. and Taylor, R. E. (Plenum Press, New York, 1969).Google Scholar
15.Hatwar, T. K., Palumbo, A., and Stinson, D., IEEE Tran. Magn. 24, 2775 (1988).CrossRefGoogle Scholar
16.Messier, R., J. Vac. Sci. Technol. A 4, 490 (1986).CrossRefGoogle Scholar
17.Choy, C. L., Leung, W. P., and Ng, Y. K., J. Appl. Phys. 66, 5335 (1989).CrossRefGoogle Scholar
18.Kingery, W. D., Bowen, H. K., and Uhlmann, D. R., in Introduction to Ceramics, 2nd ed. (John Wiley and Sons, New York, 1976).Google Scholar
19.Shaw-Klein, L. J., Burns, S. J., and Jacobs, S. D., in Electronic Packaging Materials Science V, edited by Lillie, E. D., Ho, P. S., Jaccodine, R., and Jackson, K. (Mater. Res. Soc. Symp. Proc. 203, Pittsburgh, PA, 1991).Google Scholar
20.Klemens, P. G., in Non-Crystalline Solids, edited by Frechette, V. D. (John Wiley and Sons, New York, 1958).Google Scholar
21.Kato, Y., Takayama, S., Matsubara, E. and Waseda, Y., Jpn. J. Appl. Phys. 30, 764 (1991).CrossRefGoogle Scholar