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An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

Published online by Cambridge University Press:  31 January 2011

Seung-Hyun Kim
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
D. J. Kim
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
K. M. Lee
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
M. Park
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695
J. Im
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
S. K. Streiffer
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
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Abstract

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

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