Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Lum, R.M.
and
Kiingert, J.K.
1988.
Comparison of Low Vapor Pressure Organoarsenic Compounds for Movpe Growth of GaAs.
MRS Proceedings,
Vol. 144,
Issue. ,
Gedridge, Robert W.
Higa, Kelvin T.
and
Nissan, Robin A.
1988.
New Organotellurium Precursors for the Pyrolytic and Photolytic Deposition of Hg1-xCdxTe.
MRS Proceedings,
Vol. 131,
Issue. ,
Giapis, Konstantinos P.
Da-Cheng, Lu
and
Jensen, Klavs F.
1988.
Effects of the Selenium Precursor on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition.
MRS Proceedings,
Vol. 131,
Issue. ,
Cody, N. W.
Sudarsan, U.
and
Solanki, R.
1988.
Low Temperature Epitaxy of Hg1−xCdxTe.
MRS Proceedings,
Vol. 129,
Issue. ,
Li, S.H.
Buchan, N.I.
Larsen, C.A.
and
Stringfellow, G.B.
1989.
The effect of supplemental t-butyl radicals on the pyrolysis of tertiarybutylarsine, tertiarybutylphosphine, and ditertiarybutylarsine.
Journal of Crystal Growth,
Vol. 98,
Issue. 3,
p.
309.
Li, S.H.
Buchan, N.I.
Larsen, C.A.
and
Stringfellow, G.B.
1989.
OMVPE growth mechanism for GaP using tertiarybutylphosphine and trimethylgallium.
Journal of Crystal Growth,
Vol. 96,
Issue. 4,
p.
906.
Lum, R. M.
Klingert, J. K.
and
Kisker, D. W.
1989.
Effects of methylarsine homologs (CH3)nAsH3−n on the metalorganic vapor-phase epitaxy of GaAs.
Journal of Applied Physics,
Vol. 66,
Issue. 2,
p.
652.
McAllister, Trevor
1989.
Chemical kinetics of telluride pyrolysis.
Journal of Crystal Growth,
Vol. 96,
Issue. 3,
p.
552.
Ghandhi, S. K.
Bhat, I. B.
Ehsani, H.
Nucciarone, D.
and
Miller, G.
1989.
Low-temperature growth of HgTe and HgCdTe using methylallyltelluride.
Applied Physics Letters,
Vol. 55,
Issue. 2,
p.
137.
Stringfellow, Gerald B.
1989.
Organometallic Vapor-Phase Epitaxy.
p.
15.
Lum, R. M.
and
Klingert, J. K.
1989.
Thermochemistry of alkylarsine compounds used as arsenic precursors in metalorganic vapor phase epitaxy.
Journal of Applied Physics,
Vol. 66,
Issue. 8,
p.
3820.
Mullin, J.B.
Cole-Hamilton, D.J.
Irvine, S.J.C.
Hails, J.E.
Giess, J.
and
Gough, J.S.
1990.
MOVPE of narrow and wide gap II–VI compounds.
Journal of Crystal Growth,
Vol. 101,
Issue. 1-4,
p.
1.
Giapis, Konstantinos P.
and
Jensen, Klavs F.
1990.
Effect of operating conditions and precursors on optoelectronic properties of OMVPE grown ZnSe.
Journal of Crystal Growth,
Vol. 101,
Issue. 1-4,
p.
111.
Pain, G.N.
Christiansz, G.I.
Dickson, R.S.
Deacon, G.B.
West, B.O.
McGgregor, K.
and
Rowe, R.S.
1990.
Selection of organometallics for MOCVD of Hg1−xCdxTe and doped semiconductors.
Polyhedron,
Vol. 9,
Issue. 7,
p.
921.
Triboulet, R.
1991.
MOVPE of narrow band gap II–VI materials.
Journal of Crystal Growth,
Vol. 107,
Issue. 1-4,
p.
598.
Lum, R.M.
and
Klingert, J.K.
1991.
Alternative group V precursors for CVD applications.
Journal of Crystal Growth,
Vol. 107,
Issue. 1-4,
p.
290.
Kuech, Thomas F.
and
Jensen, Klavs F.
1991.
Thin Film Processes.
p.
369.
Patnaik, Sanjay
Jensen, Klavs F.
and
Giapis, Konstantinos P.
1991.
MOVPE of ZnSe using organometallic allyl selenium precursors.
Journal of Crystal Growth,
Vol. 107,
Issue. 1-4,
p.
390.
Hails, J.E.
and
Irvine, S.J.C.
1991.
Screening of organotellurium compounds for use as MOVPE precursors.
Journal of Crystal Growth,
Vol. 107,
Issue. 1-4,
p.
319.
Dumont, Hervé
Marbeuf, Alain
Bourée, Jean Eric
and
Gorochov, Ouri
1992.
Mass-spectrometric study of thermal decomposition of diethylzinc and diethyltellurium.
J. Mater. Chem.,
Vol. 2,
Issue. 9,
p.
923.