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An alternative chemical route for synthesis of SrBi2Ta2O9 thin films

Published online by Cambridge University Press:  31 January 2011

S. M. Zanetti ,
E. R. Leite ,
E. Longo ,
E. B. Araújo ,
A. J. Chiquito ,
J. A. Eiras  and
J. A. Varela
S. M. Zanetti
Affiliation:
Departamento de Química—Universidade Federal de São Carlos, P.O. Box 676, 13560–905 São Carlos, SP, Brazil
E. R. Leite
Affiliation:
Departamento de Química—Universidade Federal de São Carlos, P.O. Box 676, 13560–905 São Carlos, SP, Brazil
E. Longo
Affiliation:
Departamento de Química—Universidade Federal de São Carlos, P.O. Box 676, 13560–905 São Carlos, SP, Brazil
E. B. Araújo
Affiliation:
Departamento de Física—Universidade Federal de São Carlos, P.O. Box 676, 13560–905 São Carlos, SP, Brazil
A. J. Chiquito
Affiliation:
Departamento de Física—Universidade Federal de São Carlos, P.O. Box 676, 13560–905 São Carlos, SP, Brazil
J. A. Eiras
Affiliation:
Departamento de Física—Universidade Federal de São Carlos, P.O. Box 676, 13560–905 São Carlos, SP, Brazil
J. A. Varela
Affiliation:
Instituto de Química—Universidade Estadual de São Paulo, P.O. Box 355, 14801–970 Araraquara, SP, Brazil
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Abstract

SrBi2Ta2O9 was synthesized by the modified polymeric precursor method using precursor reagents such as carbonate, nitrate, or oxide. The films were deposited onto Pt/Ti/SiO2/Si(100) substrates by spin coating and crystallized at temperatures ranging from 700 to 800 °C in air. Microstructural and phase evaluation were followed by grazing incidence x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The films displayed rounded grain structures with a superficial roughness of approximately 10 nm. The dielectric constant values were 362 and 617 for films treated at 700 and 800 °C, respectively. The remanent polarization and coercive field were 12.3 μC/cm2 and 61 kV/cm and 18.48 μC/cm2 and 47 kV/cm for the film treated at 700 and 800 °C, respectively. This method generally allows for the use of readily available reagents such as oxides, carbonates, or nitrate as cation sources, with the added advantage that it requires no special apparatus or atmosphere control.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 10 , October 2000 , pp. 2091 - 2095
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Mihara, T., Yoshimori, H., Watanabe, H., and Paz de Araujo, C.A., Jpn. J. Appl. Phys. 34, 5233 (1995).Google Scholar
2. Lee, J.J., Thio, C.L., and Desu, S.B., J. Appl. Phys. 78, 5073 (1995).CrossRefGoogle Scholar
3. Aurivillius, B. and Fang, P.H., Phys. Rev. 126, 893 (1962).CrossRefGoogle Scholar
4. Yang, P., Zheng, L., Lin, C., Wu, W., and Okuyama, M., Integrated Ferroelectrics 20, 79 (1998).CrossRefGoogle Scholar
5. Yang, P., Zhou, N., Zheng, L., Lu, H., and Lin, C., J. Phys. D: Appl. Phys. 30, 527 (1997).Google Scholar
6. Okuwada, K., J. Sol-Gel Sci. Technol. 16, 77 (1999).Google Scholar
7. Klee, M. and Mackens, U., Integrated Ferroelectrics 12, 11 (1996).CrossRefGoogle Scholar
8. Bouquet, V., Leite, E.R., Longo, E., and Varela, J.A., J. Eur. Ceram. Soc. 19, 1447 (1999).Google Scholar
9. Zanetti, S.M., Leite, E.R., Long, E., and Varela, J.A., J. Mater. Res. 13, 2392 (1998).Google Scholar
10. Silverstein, R.M., Bassler, G.C., and Morril, T.C., Spectrometric Identification of Organic Compounds, 3rd ed., edited by Koogan, G. (John Wiley, New York, 1979), p. 91.Google Scholar
11. Osaka, T., Sakakibara, A., Seki, T., Ono, S., Koiwa, I., and Hashimoto, A., Jpn. J. Appl. Phys. 37, Part 1, 2, 597 (1998).CrossRefGoogle Scholar
12. Rodriguez, M.A., Boyle, T.J., Hernandez, B.A., Buchheit, C.D., and Eatough, M.O., J. Mater. Res. 11, 2282 (1996).Google Scholar
13. Triebwasser, S., Phys. Rev. 118, 100 (1960).CrossRefGoogle Scholar
14. Yeon, D.J., Park, J.D., and Oh, T.S., J. Korean Phys. Soc. 32, S1445 (1998).Google Scholar
15. Chang, H.J., Suli, K.J., Kim, M.Y., and Chang, G.K., J. Korean Phys. Soc. 32, S1679 (1998).Google Scholar
16. Seong, N-J., Choi, E-S., and Yoon, S-G., J. Korean Phys. Soc. 32, S1691 (1998).Google Scholar
17. Nukaga, N., Ishikawa, K., and Funakubo, H., Jpn. J. Appl. Phys. 38, Part 1, 9B, 5428 (1999).CrossRefGoogle Scholar