Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Custer, J. S.
Thompson, Michael O.
Jacobson, D. C.
and
Poate, J. M.
1990.
Changing Segregation Coefficients During Ion Beam Induced Epitaxy of Amorphous Si.
MRS Proceedings,
Vol. 205,
Issue. ,
Bond, P.
Duckworth, D.
Elliman, R.G.
Henshaw, R.
Johnson, S.T.
Ridgway, M.C.
Thornton, R.P.
Williams, J.S.
Byers, P.
and
Chivers, D.J.
1991.
A versatile WIBS 200 kV ion implanter for materials modification.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 55,
Issue. 1-4,
p.
511.
Thornton, R.P.
Li, Y.H.
Elliman, R.G.
and
Williams, J.S.
1991.
The annealing behaviour of ion-implanted Si studied using time-resolved reflectivity.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 55,
Issue. 1-4,
p.
598.
Ridgway, M.C.
Elliman, R.G.
Petravic, M.
Thornton, R.P.
and
Williams, J.S.
1991.
The influence of implanted impurities on the thermally-induced epitaxial recrystallization of CoSi2.
Journal of Materials Research,
Vol. 6,
Issue. 5,
p.
1035.
Mei, P.
Schmidt, M. T.
Yang, E. S.
and
Wilkens, B. J.
1991.
Structural study of tin and carbon coimplanted silicon.
Journal of Applied Physics,
Vol. 69,
Issue. 12,
p.
8417.
Elliman, R. G.
and
Fang, Z. W.
1993.
The effect of temperature and doping on the segregation of In during solid-phase-epitaxial crystallization of Si.
Journal of Applied Physics,
Vol. 73,
Issue. 7,
p.
3313.
Custer, J.S.
Thompson, Michael O.
Eaglesham, D.J.
Jacobson, D.C.
and
Poate, J.M.
1993.
Epitaxial growth versus nucleation in amorphous Si doped with Cu and Ag.
Journal of Materials Research,
Vol. 8,
Issue. 4,
p.
820.
Takahiro, K.
Matsui, T.
Nagata, S.
and
Yamaguchi, S.
1994.
Recrystallization of Si amorphized by Cu and Au ion implantation.
Surface and Coatings Technology,
Vol. 66,
Issue. 1-3,
p.
408.
Kobayashi, N.
Hasegawa, M.
Hayashi, N.
Katsumata, H.
Makita, Y.
Shibata, H.
and
Uekusa, S.
1995.
Growth of Si1-x.Snx Layers on Si by Ion-Beam-Induced Epitaxial Crystallization (Ibiec) and Solid Phase Epitaxial Growth (Speg).
MRS Proceedings,
Vol. 396,
Issue. ,
Sardela, M. R.
Turan, R.
Willander, M.
Hansson, G. V.
and
Hultman, L.
1995.
Strain determination and microstructural characterization of 50 keV Sn-ion-implanted Si(001).
Journal of Applied Physics,
Vol. 77,
Issue. 4,
p.
1411.
Kuznetsov, A.Yu.
and
Svensson, B.G.
1995.
Transient kinetics in solid phase epitaxy of Ni doped amorphous silicon.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 96,
Issue. 1-2,
p.
261.
Kobayashi, N.
Hasegawa, M.
Hayashi, N.
Katsumata, H.
Makita, Y.
Shibata, H.
and
Uekusa, S.
1996.
Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization.
Applied Surface Science,
Vol. 100-101,
Issue. ,
p.
498.
Kobayashi, N.
Zhu, D.H.
Katsumata, H.
Kakemoto, H.
Hasegawa, M.
Hayashi, N.
Shibata, H.
Makita, Y.
Uekusa, S.
and
Tsukamoto, T.
1997.
Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 121,
Issue. 1-4,
p.
199.
Khalifa, F.A
Naseem, H.A
Shultz, J.L
and
Brown, W.D
1999.
In situ analysis of aluminum enhanced crystallization of hydrogenated amorphous silicon (a-Si:H) using X-ray diffraction.
Thin Solid Films,
Vol. 355-356,
Issue. ,
p.
343.
Duffy, R.
Venezia, V. C.
van der Tak, K.
Hopstaken, M. J. P.
Maas, G. C. J.
Roozeboom, F.
Tamminga, Y.
and
Dao, T.
2005.
Impurity redistribution due to recrystallization of preamorphized silicon.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Vol. 23,
Issue. 5,
p.
2021.
Chan, T. K.
Fang, F.
Markwitz, A.
and
Osipowicz, T.
2012.
Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry.
Applied Physics Letters,
Vol. 101,
Issue. 8,
p.
081602.
Neimash, V.
Poroshin, V.
Shepeliavyi, P.
Yukhymchuk, V.
Melnyk, V.
Kuzmich, A.
Makara, V.
and
Goushcha, A. O.
2013.
Tin induced a-Si crystallization in thin films of Si-Sn alloys.
Journal of Applied Physics,
Vol. 114,
Issue. 21,
Chan, T.K.
Koh, S.Y.
Fang, V.
Markwitz, A.
and
Osipowicz, T.
2014.
Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture.
Applied Surface Science,
Vol. 314,
Issue. ,
p.
322.
Neimash, Volodymyr B.
Goushcha, Alexander O.
Shepeliavyi, Petro Y.
Yukhymchuk, Volodymyr O.
Danko, Viktor A.
Melnyk, Viktor V.
and
Kuzmich, Andrey G.
2015.
Self-sustained cyclic tin induced crystallization of amorphous silicon.
Journal of Materials Research,
Vol. 30,
Issue. 20,
p.
3116.
Rudenko, R. M.
Voitsihovska, O. O.
Voitovych, V. V.
Kras’ko, M. M.
Kolosyuk, A. G.
Povarchuk, V. Yu.
Rudenko, M. P.
and
Knorozok, L. M.
2020.
Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films.
Ukrainian Journal of Physics,
Vol. 65,
Issue. 3,
p.
236.