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Amorphous, Silicide, and Crystalline Fe Films Grown on Si(001) by Radio-frequency Magnetron Sputtering

Published online by Cambridge University Press:  31 January 2011

J. H. Je ,
H. K. Kim  and
D. Y. Noh
J. H. Je*
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science & Technology, Pohang, Korea
H. K. Kim
Affiliation:
Department of Physics, Pusan University, Pusan, Korea
D. Y. Noh
Affiliation:
Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science & Technology, Kwangju, Korea
*
a)Address all correspondence to this author.
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Abstract

The microstructure of the amorphous, silicide, and crystalline Fe films grown on Si(001) substrates by a radio-frequency (rf) magnetron sputtering was studied in synchrotron x-ray scattering experiments. During the growth, iron-silicide interlayers were always formed. The silicide interlayer became crystalline β–FeSi2 at high rf power (⩾20 W/cm2) and at the substrate temperature of 100 °C. The formation of the β–FeSi2 was also promoted by postannealing to 300 °C. The Fe films grown on top of the silicide interlayer were amorphous at low substrate temperatures (⩽100 °C). It became crystalline only at high substrate temperature (300 °C) with the low rf power of 2 W/cm2. The crystalline Fe film was nonepitaxial but had the [111] preferred orientation.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1658 - 1663
Copyright
Copyright © Materials Research Society 1999

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