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Advanced epitaxial Si and GexSi1−x multiprocessing for semiconductor device technologies

Published online by Cambridge University Press:  31 January 2011

Mehrdad M. Moslehi  and
Cecil J. Davis
Mehrdad M. Moslehi
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Cecil J. Davis
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
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Abstract

A single-wafer multiprocessing technology has been developed based on the use of lamp heating and remote microwave plasma process energy sources for fabrication of in-situ-doped homoepitaxial Si and heteroepitaxial Si/GexSi1−x multilayer structures via chemical-vapor deposition. Some effective low-temperature (650°–800°C) processes were developed for in-situ pre-epitaxial growth surface cleaning. These chemical cleaning processes employ GeH4 + H2 or GeH4 + H2 + (HF or HCl) gas mixtures with very small GeH4-to-H2 gas flow rate ratios. Multilayer heteroepitaxial structures with controlled doping and Ge fractions consisting of strained Ge4Si1−x layers were fabricated and characterized.

Type
Materials Communications
Information
Journal of Materials Research , Volume 5 , Issue 6 , June 1990 , pp. 1159 - 1162
Copyright
Copyright © Materials Research Society 1990

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References

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