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Adsorption on epitaxial graphene on SiC(0001)

Published online by Cambridge University Press:  11 September 2013

Han Huang  and
Andrew Thye Shen Wee
Han Huang*
Affiliation:
Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, China, 410083; Department of Physics, National University of Singapore, Singapore, 117542; and Graphene Research Center, National University of Singapore, Singapore 117546
Andrew Thye Shen Wee*
Affiliation:
Department of Physics, National University of Singapore, Singapore, 117542; and Graphene Research Center, National University of Singapore, Singapore 117546
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)e-mail: [email protected]
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Abstract

Graphene, a single atomic sheet of sp2-bonded carbon atoms arranged in a honeycomb lattice, exhibits extraordinary electrical and mechanical properties, attracting much attention in both academia and industry. The preparation of high quality large-area graphene and the tuning of graphene electronic properties are important topics in this field. In this feature paper, we review our recent work on epitaxial graphene (EG) on SiC(0001). First, we introduce the bottom-up growth mechanism of the first few EG layers on SiC(0001), and the modification of graphene electronic properties by means of surface transfer doping with electron withdrawing materials (F4-TCNQ and MoO3). Next, we summarize the adsorption behaviors of organic (PTCDA, ClAlPc, and C60F48) and inorganic (bismuth) materials on EG/SiC(0001). Finally, as an example of tuning the electronic properties of graphene by reducing its dimensionality, we demonstrate the molecular self-assembly of atomically precise armchair graphene nanoribbons with varying widths and electronic structures.

Keywords

self-assemblynanostructurescanning tunneling microscopy (STM)
Type
Invited Papers
Information
Journal of Materials Research , Volume 29 , Issue 3: Focus Issue: Graphene and Beyond , 14 February 2014 , pp. 447 - 458
Copyright
Copyright © Materials Research Society 2013 

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