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X-ray structural studies of epitaxial yttrium silicide on Si(111)

Published online by Cambridge University Press:  03 March 2011

L.J. Martínez-Miranda ,
J.J. Santiago-Avilés ,
W.R. Graham ,
P.A. Heiney  and
M.P. Siegal
L.J. Martínez-Miranda
Affiliation:
Department of Electrical Engineering and Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104
J.J. Santiago-Avilés
Affiliation:
Department of Electrical Engineering and Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104
W.R. Graham
Affiliation:
Department of Electrical Engineering and Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104
P.A. Heiney
Affiliation:
Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania 19104
M.P. Siegal
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico 87185
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Abstract

We performed a series of glancing angle and reflection x-ray diffraction experiments to study both the in-plane and out-of-plane structure of epitaxial YSi2−x films grown on Si(111), with thicknesses ranging from 85 Å to 510 Å. These measurements allowed us to characterize the mean film lattice constants, the position correlation lengths of the film, and the presence and extent of strain as a function of film thickness. We find that the strain along the basal plane increases as a function of increasing thickness to approximately 1% in the 510 Å film; the corresponding out-of-plane strain is such that the film unit cell volume increases as a function of thickness. The corresponding in-plane microscopic strain varies from 0.5% for the 85 Å film to 0.3% for the 510 Å film. We relate our results to the mode of film growth and the presence of pinholes in the films.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 6 , June 1994 , pp. 1434 - 1440
Copyright
Copyright © Materials Research Society 1994

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References

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