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Vapor deposition of parylene-F using hydrogen as carrier gas

Published online by Cambridge University Press:  26 July 2012

D. Mathur ,
G-R. Yang  and
T-M. Lu
D. Mathur
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing, and Electronic Media and The Howard P.Isermann Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
G-R. Yang
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing, and Electronic Media and Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180
T-M. Lu
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing, and Electronic Media and Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180
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Extract

A new method for depositing parylene-F (PA-F) thin films on silicon substrates has been explored. Hydrogen has been used as a carrier gas along with liquid precursors, dibromotetrafluoro-p-xylene and 1,4-bis(trifluoromethyl)benzene, to deposit PA-F. The properties of this film have been compared with the films obtained by the Gorham dimer method and the liquid precursor method using FTIR, XPS, and XRD. The PA-F films deposited by the dimer or liquid precursor acquired some kind of microcrystallinity on annealing. However, the PA-F films deposited in the presence of hydrogen were amorphous on annealing. This property could be potentially exploited for application in microelectronic device fabrication.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 1 , January 1999 , pp. 246 - 250
Copyright
Copyright © Materials Research Society 1999

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References

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