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Vacancy structures on the GaN(0001) surface

Published online by Cambridge University Press:  31 January 2011

William E. Packard ,
John D. Dow ,
Kathleen Doverspike ,
Ray Kaplan  and
Ruth Nicolaides
William E. Packard
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
John D. Dow
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
Kathleen Doverspike
Affiliation:
Naval Research Laboratory, 4555 Overlook Avenue, S.W., Washington, DC 20375
Ray Kaplan
Affiliation:
Naval Research Laboratory, 4555 Overlook Avenue, S.W., Washington, DC 20375
Ruth Nicolaides
Affiliation:
Institute for Postdoctoral Studies, 1842 Estate Enighed, Cruz Bay, St. John, U.S. Virgin Islands 00830
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Abstract

Scanning tunneling microscopy images are reported for the wurtzite GaN(0001) surface. Terraces are observed, with three kinds of defect structures that are assigned to ordered N-vacancies: (i) striations perpendicular to the step edges, (ii) row defects spaced about 16 Å that intersect the steps at an angle of 30°, and (iii) “oval” defects that result from intersections of lines of vacancies (oriented at 60° with respect to step edges) with the row defects.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 3 , March 1997 , pp. 646 - 650
Copyright
Copyright © Materials Research Society 1997

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