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Vacancy diffusion along twist grain boundaries in copper

Published online by Cambridge University Press:  31 January 2011

Miki Nomura ,
Sing-Yun Lee  and
James B. Adams
Miki Nomura
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
Sing-Yun Lee
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
James B. Adams
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
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Abstract

Vacancy diffusion along two different high-angle twist grain boundaries (Σ5 and Σ13) was studied using the Embedded Atom Method (EAM). Vacancy formation energies in all the possible sites were calculated and found to be directly related to the degree of coincidence with the neighboring crystal planes. Optimal migration paths and migration energies were determined and found to be very low. The activation energies for self-diffusion at the boundaries were found to be less than half of the bulk value.

Type
Materials Communications
Information
Journal of Materials Research , Volume 6 , Issue 1 , January 1991 , pp. 1 - 4
Copyright
Copyright © Materials Research Society 1991

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