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Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

Published online by Cambridge University Press:  31 January 2011

Jiong-Ping Lu  and
Rishi Raj
Jiong-Ping Lu
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
Rishi Raj
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
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Abstract

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 9 , September 1991 , pp. 1913 - 1918
Copyright
Copyright © Materials Research Society 1991

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