Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-23T12:12:38.763Z Has data issue: false hasContentIssue false
  • English
  • Français

Transparent Conductive In-doped Cd3TeO6 Thin Films with Perovskite Structure Deposited by Radio Frequency Magnetron Sputtering

Published online by Cambridge University Press:  03 March 2011

Hiroyuki Tetsuka ,
Yue Jin Shan ,
Keitaro Tezuka ,
Hideo Imoto  and
Kiyotaka Wasa
Hiroyuki Tetsuka*
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
Yue Jin Shan
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
Keitaro Tezuka
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
Hideo Imoto
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
Kiyotaka Wasa
Affiliation:
Faculty of Science, Yokohama City University, Nara 631-0045, Japan
*
a) Address all correspondence to this author.e-mail: [email protected]
Get access

Abstract

Transparent conductive In-doped Cd3TeO6 thin films were deposited on silica glass substrate by radio frequency magnetron sputtering using targets composed of CdO, TeO2, and In2O3 powders, and their electrical and optical properties were examined. The electrical resistivity of 3.2 × 10−3 Ωcm and an average transmittance above 80% in the visible region (400–800 nm) were obtained for the films deposited at the substrate temperature above 300 °C. The maximum optical band gap was 3.92 eV for the film deposited at 700 °C, demonstrating a large optical band gap comparable to indium tin oxide.

Keywords

Optical propertiesSputteringTransparent conductor
Type
Rapid Communications
Information
Journal of Materials Research , Volume 20 , Issue 9 , September 2005 , pp. 2256 - 2260
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Ray, S., Banerjee, R., Basu, N., Batabyal, A.K. and Barua, A.K.: Properties of tin-doped indium oxide thin films prepared by magnetron sputtering. J. App. Phys. 54, 3497 (1983).CrossRefGoogle Scholar
2Minami, T., Nanto, H. and Takata, S.: Highly conducting and transparent SnO2 thin films prepared by rf magnetron sputtering on low temperature substrates. Jpn. J. Appl. Phys. 27 L287 (1988).CrossRefGoogle Scholar
3Webb, J.B., Williams, D.F. and Buchanan, M.: Transparent and highly conductive films of zinc oxide prepared by rf reactive magnetron sputtering. Appl. Phys. Lett. 39, 640 (1981).CrossRefGoogle Scholar
4Minami, T., Sonohara, H., Kakumu, T. and Takata, S.: Highly transparent and conductive Zn2In2O5 thin film prepared by rf magnetron sputtering. Jpn. J. Appl. Phys. 34 L971 (1995).CrossRefGoogle Scholar
5Orita, M., Takeuchi, M., Sasaki, H. and Tanji, H.: New transparent conductive oxides with YbFe2O4 structure. Jpn. J. Appl. Phys. 34, L1550 (1955).CrossRefGoogle Scholar
6Politova, E.D. and Venevtsev, Yu.N.: Ferroelectricity and antiferroelectricity in tellurium containing compounds with perovskite structure. Mater. Res. Bull. 10, 319 (1975).CrossRefGoogle Scholar
7Burckhardt, H.G., Platte, C. and Trömel, M.: Cadmium tellurate (VI) Cd3TeO6: A pseudoorthorhombic cryolite in comparison with calcium tellurate Ca3TeO6. Acta Crystallogr. B 38, 2450 1982, (in German).CrossRefGoogle Scholar
8Wang, H.H., Chen, F., Dai, S.Y., Zhao, T., Lu, H.B., Cui, D.F., Zhou, Y.L., Chen, Z.H. and Yang, G.Z.: Sb-doped SrTiO3 transparent semiconductor thin films. Appl. Phys. Lett. 78, 1676 (2001).CrossRefGoogle Scholar
9Cho, J.H. and Cho, H.J.: Optical transparency of metallic La0.5Sr0.5TiO3+δ thin films. Appl. Phys. Lett. 79, 1426 (2001).CrossRefGoogle Scholar
10Menéndez-Proupin, E., Gutiérrez, G., Palmero, E. and Peña, J.L.: Electronic structure of crystalline binary and ternary Cd–Te–O compounds. Phys. Rev. B 70, 035112 (2004).CrossRefGoogle Scholar
11Shan, Y.J., Sasaki, K., Sudo, K., Imoto, H. and Itoh, M.: New n -type thermoelectric oxide, Cd3TeO6. Jpn. J. Appl. Phys. 41, 780 (2002).CrossRefGoogle Scholar
12Luan, W., Shan, Y.J., Itoh, M. and Imoto, H.: Preparation and thermoelectric properties of Cd3−xAx TeO6 (A = In, La, and Bi) ceramics. Ceram. Int. 31, 129 (2005).CrossRefGoogle Scholar
13Ino, H., Murayama, K., Koinuma, H. and Nanao, S.: Amorphous Materials (Tokyo Univ. Press, Tokyo, Japan, 1985), p. 186.Google Scholar
14Friedman, L.: Hall conductivity of amorphous semiconductors in the random phase model. J. Non-Cryst. Solids 6, 329 (1971).CrossRefGoogle Scholar