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A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

U. Kaiser ,
S. B. Newcomb ,
W. M. Stobbs ,
M. Adamik ,
A. Fissel  and
W. Richter
U. Kaiser*
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
S. B. Newcomb
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
W. M. Stobbs*
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
M. Adamik
Affiliation:
Research Institute for Technical Physics, H-1325, P.O. Box 76, Budapest, Hungary
A. Fissel
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
W. Richter
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
*
a)Address correspondence to this author.
b)Deceased.
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Abstract

The effects of different growth parameters on the microstructure of the SiC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750–900 °C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The formation of single-crystal 3C films has been found to occur at low growth rates but within a limited Si: C adatom ratio. A combination of transmission electron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are described.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 12 , December 1998 , pp. 3571 - 3579
Copyright
Copyright © Materials Research Society 1998

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