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Transmission Electron Microscopy and High-Resolution Transmission Electron Microscopy Study of Nanostructure and Metastable Phase Evolution in Pulsed-Laser-Ablation–Deposited Ti–Si Thin Film

Published online by Cambridge University Press:  03 March 2011

S. Bysakh
Affiliation:
Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305 0003, Japan; and Department of Metallurgy, Indian Institute of Science, Bangalore 560012, India
K. Mitsuishi
Affiliation:
Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305 0003, Japan
M. Song
Affiliation:
Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305 0003, Japan
K. Furuya
Affiliation:
Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305 0003, Japan
K. Chattopadhyay
Affiliation:
Department of Metallurgy, Indian Institute of Science, Bangalore 560012, India
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Abstract

Thin films with a nominal composition close to Ti62.5Si37.5 were deposited on NaCl substrate at room temperature by pulsed laser ablation to study the evolution of the intermetallic compound Ti5Si3 using a combination of high-resolution and in situ transmission electron microscopy. The as-deposited amorphous films contain Ti-rich clusters, which influence the phase evolution and the decomposition behavior of the amorphous film. These clusters influence the nucleation of a metastable fcc Ti solid solution (ao = 0.433 nm) with composition richer in Ti than Ti62.5Si37.5 as the first phase to crystallize at 773 K. The Ti5Si3 nanocrystals form later, and even at 1073 K they coexist with fine fcc Ti-rich nanocrystals. Subsequent Ar+ ion-milling of the crystallized film results in a loss of silicon. The composition change leads to the dissolution of the Ti5Si3 nanocrystals and evolution of a new metastable Ti-rich fcc phase (ao= 0.408 nm).

Type
Articles
Copyright
Copyright © Materials Research Society 2004

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References

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