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Titanium disulfide thin film prepared by plasma CVDa)

Published online by Cambridge University Press:  31 January 2011

S. Kikkawa ,
M. Miyazaki  and
M. Koizumi
S. Kikkawa*
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan
M. Miyazaki
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan
M. Koizumi
Affiliation:
Faculty of Science and Technology, Ryukoku University, Ohtsu, Shiga 520-21, Japan
*
b)Address correspondence to this author.
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Abstract

Titanium disulfide films were prepared by plasma CVD. Crystalline orientation of layered TiS2 was investigated in relation to deposition rate, film thickness, and kinds of substrate. The preferred orientation of TiS2 basal plane perpendicular to substrates was obtained on the films with their thickness of more than ca. 10 μm at the deposition rate of ca. 4 ⊠ 10−3 g/cm2·h on all kinds of substrate. This orientation resulted in a large discharge capacity in a lithium battery cathode application.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 12 , December 1990 , pp. 2894 - 2901
Copyright
Copyright © Materials Research Society 1990

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Footnotes

a)

Paper paesented, in part, at the Fall Meeting of the Materials Research Society, on “Plasma Assisted Deposition of New Materials” (Symp. N), Boston, Massachusetts, 1987.

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