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Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W

Published online by Cambridge University Press:  31 January 2011

E. G. Colgan  and
J. W. Mayer
E. G. Colgan
Affiliation:
IBM, East Fishkill, General Technology Division, Hopewell Junction, New York 12533
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
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Abstract

The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The reaction temperatures varied between 350 and 525 °C.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 4 , August 1989 , pp. 815 - 820
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1Fraser, D.B., in VLSI Technology, edited by Sze, S.M. (McGraw-Hill, New York, 1983), p. 347.Google Scholar
2Rosenberg, R., Sullivan, M.J., and Howard, J. K., in Thin Films—Interdiffusion and Reaction, edited by Poate, J. M., Tu, K. N., and Mayer, J. W. (John Wiley, New York, 1978), Chap. 2.Google Scholar
3Nicolet, M-A. and Bartur, M., J. Vac. Sci. Technol. 19, 786 (1981).CrossRefGoogle Scholar
4Tu, K. N. and Mayer, J. W., in Thin Films—Interdiffusion and Reaction edited by Poate, J. M., Tu, K. N., and Mayer, J. W. (John Wiley, New York, 1978), p. 382.Google Scholar
5Nicolet, M-A. and Lau, S.S., in VLSI Electronics Microstructure Science, edited by Einspruch, N.G. and Larrabee, G.B. (Academic Press, New York, 1983), Vol. 6, Chap. 6.Google Scholar
6Murarka, S.P., for VLSI Applications (Academic Press, New York, 1983).Google Scholar
7Bené, R. W., Appl. Phys. Lett. 41, 529 (1982), where the rule should read liquidus rather than eutectic, private communication from Bené, R. W..CrossRefGoogle Scholar
8Howard, J. K., Lever, R. F., Smith, P. J., and Ho, P. S., J. Vac. Sci. Technol. 13, 68 (1976).CrossRefGoogle Scholar
9Howard, J. K., White, J. F., and Ho, P. S., J. Appl. Phys. 49, 4083 (1978).CrossRefGoogle Scholar
10Colgan, E.G. and Mayer, J.W., J. Mater. Res. 1, 786 (1986).CrossRefGoogle Scholar
11Howard, J.K., Chu, W. K., and Lever, R. F., Ion Beam Surface Layer Analysis, edited by Meyer, O., Linker, G., and Kappeler, F. (Plenum Press, New York, 1976), Vol. 1, p. 125.CrossRefGoogle Scholar
12Chamberlain, M. B., J. Vac. Sci. Technol. 16, 339 (1979).CrossRefGoogle Scholar
13Ball, R. K. and Todd, A. G., Thin Solid Films 149, 269 (1987).CrossRefGoogle Scholar
14Liaw, J-W., Liu, Y-C., Maa, J-S., Hsu, W-S., Shen, W-J., and Hsiung, S.K., Ts'ai Liao K'o Hsueh 12, 36 (1980).Google Scholar
15Huang, H-C.W. and Wittmer, M., Mater. Res. Soc. Symp. Proc. (Elsevier, New York, 1984), Vol. 25, p. 157.Google Scholar
16Nakamura, K., Lau, S.S., Nicolet, M-A., and Mayer, J.W., Appl. Phys. Lett. 28, 277 (1976).CrossRefGoogle Scholar
17Krafcsik, I., Gyulai, J., Palmstrom, C. J., and Mayer, J. W., Appl. Phys. Lett. 43, 1015 (1983).CrossRefGoogle Scholar
18Tardy, J. and Tu, K. N., Phys. Rev. B 32, 2070 (1985).CrossRefGoogle Scholar
19Wittmer, M., LeGoues, F., and Huang, H-C. W., J. Electrochem. Soc. 132, 1450 (1985).CrossRefGoogle Scholar
20Zhao, X-A., Thuillard, M., and Nicolet, M-A., Appl. Phys. A 46, 35 (1988).CrossRefGoogle Scholar
21Zhao, X-A., So, F.C.T., and Nicolet, M-A., J. Appl. Phys. 63, 2800 (1988).CrossRefGoogle Scholar
22Colgan, E. G. and Mayer, J. W., Nucl. Instr. and Meth. B17, 242 (1986).CrossRefGoogle Scholar
23Hong, Q. Z., Lilienfeld, D. A., and Mayer, J. W., J. Appl. Phys. 64, 4478 (1988).CrossRefGoogle Scholar
24Gurp, G. J. van, Daams, J. L. C., Oostrom, A. van, Augustus, L. J. M., and Tamminga, Y., J. Appl. Phys. 50, 6915 (1979).CrossRefGoogle Scholar
25Colgan, E. G., Li, C-Y., and Mayer, J. W., Appl. Phys. Lett. 51, 424 (1978).CrossRefGoogle Scholar
26Colgan, E. G., Li, C-Y., and Mayer, J. W., J. Mater. Res. 2, 557 (1987).CrossRefGoogle Scholar
27Doolittle, L.R., Nucl. Inst. Meth. B9, 344 (1985).CrossRefGoogle Scholar
28The stopping power data came from Ziegler, J. F., Helium, Stopping Powers and Ranges in All Elements (Pergamon, New York, 1977).Google Scholar
29Colgan, E. G. and Mayer, J. W., Mater. Res. Soc. Symp. Proc. 119, 109 (1988).CrossRefGoogle Scholar