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Thin Film Cracking and Ratcheting Caused by Temperature Cycling

Published online by Cambridge University Press:  31 January 2011

M. Huang ,
Z. Suo ,
Q. Ma  and
H. Fujimoto
M. Huang
Affiliation:
Mechanical and Aerospace Engineering Department and Materials Institute, Princeton University, Princeton, New Jersey 08544
Z. Suo
Affiliation:
Mechanical and Aerospace Engineering Department and Materials Institute, Princeton University, Princeton, New Jersey 08544
Q. Ma
Affiliation:
Intel Corporation, 2200 Mission College Boulevard, Santa Clara, California 95052
H. Fujimoto
Affiliation:
Intel Corporation, 2200 Mission College Boulevard, Santa Clara, California 95052
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Abstract

Layered materials are susceptible to failure upon temperature cycling. This paper describes an intriguing mechanism: cracking in a brittle layer caused by ratcheting in an adjacent ductile layer. For example, on a silicon die directly attached to an organic substrate, cracking often occurs in the silicon nitride film over aluminum pads. The silicon die and the organic substrate have different thermal expansion coefficients, inducing shear stresses at the die corners. Aided by cycling temperature, the shear stresses cause ratcheting in the aluminum pads. Incrementally, the stress relaxes in the aluminum pads and builds up in the overlaying silicon nitride film, leading to cracks.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 6 , June 2000 , pp. 1239 - 1242
Copyright
Copyright © Materials Research Society 2000

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