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Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

Published online by Cambridge University Press:  03 March 2011

C.S. Zhang ,
H.B Xiao ,
Y.J. Wang ,
Z.J. Chen ,
X.L. Cheng  and
F. Zhang
C.S. Zhang*
Affiliation:
The Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
H.B Xiao
Affiliation:
The Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Y.J. Wang
Affiliation:
The Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Z.J. Chen
Affiliation:
The Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
X.L. Cheng
Affiliation:
The Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
F. Zhang
Affiliation:
The Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

Keywords

LuminescenceNanoparticleAnnealing
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 9 , September 2004 , pp. 2699 - 2702
Copyright
Copyright © Materials Research Society 2004

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