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Thermal effects of scanning speed and constitutional supercooling during zone-melting recrystallization of silicon-on-insulator structures

Published online by Cambridge University Press:  29 June 2016

Sharon M. Yoon  and
Ioannis N. Miaoulis
Sharon M. Yoon
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, Massachusetts 02155
Ioannis N. Miaoulis
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, Massachusetts 02155
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Abstract

The effects of scanning speed and constitutional supercooling during zone-melting recrystallization (ZMR) of silicon-on-insulator (SOI) structures were studied numerically. Effects of strip motion and constitutional supercooling on the temperature profiles and the size and structure of the molten region were investigated. The temperature distribution and melt zone width does not alter for processing speeds lower than 400 μm/s. For higher speeds, motion causes the temperature profiles to lag behind the strip. The size of the molten zone decreases for increasing scanning speeds and increases for increasing degrees of supercooling. The combined effects of strip motion and supercooling on the size of the molten zone were determined. Supercooling reduced the size of the solidification region where liquid and solid phase silicon coexist.

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Articles
Information
Journal of Materials Research , Volume 7 , Issue 1 , January 1992 , pp. 124 - 129
Copyright
Copyright © Materials Research Society 1992

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References

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