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Temperature and porosity dependence of the thermoelectric properties of SiC/Ag sintered materials

Published online by Cambridge University Press:  31 January 2011

K. Kato ,
K. Asai ,
Y. Okamoto ,
J. Morimoto  and
T. Miyakawa
K. Kato
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
K. Asai
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
Y. Okamoto
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
J. Morimoto
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
T. Miyakawa
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
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Abstract

We have studied the thermoelectric properties of a SiC-based thermoelectric semiconductor with Ag and polysilastylene (PSS) as a dopant and as a sintering additive, respectively. Ag is an effective dopant to decrease the electrical resistivity of the SiC-based p-type thermoelectric semiconductor. It introduces carrier (hole) concentration 103−104 times larger than the case of Al-doped SiC with the typical doping concentration. PSS can control the sample density, which is one of the important factors in decreasing the electrical resistivity and thermal conductivity of the sintered samples. The figure of merit of the sample with Ag 2.0 wt% and PSS 0.1 wt% was estimated to reach 4 × 10−4 K−1 at 700 °C. This value implies that the SiC/Ag system is one of the promising thermoelectric materials for a high-temperature region.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 1752 - 1759
Copyright
Copyright © Materials Research Society 1999

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References

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