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Study of interdiffusion reaction at the CdS/CdTe interface

Published online by Cambridge University Press:  23 February 2011

Deliang Wang ,
Zerong Hou  and
Zhizhong Bai
Deliang Wang*
Affiliation:
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Zerong Hou
Affiliation:
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
Zhizhong Bai
Affiliation:
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

To detect the relatively strong scattering signals of the Raman scattering and the x-ray diffraction (XRD) from CdS and those from the CdS/CdTe interface, an inverted CdTe solar cell structure was prepared and a 35-nm-thick CdS film was deposited on the surface of a CdTe solar cell structure. The Raman and high-resolution XRD scattering spectra allowed us to qualitatively study the interdiffusion and its related reactions at the CdS/CdTe interface. Interdiffusion began to occur at a relatively low temperature of about 350 °C, which coincided with the CdS phase transformation from cubic to hexagonal phase. Substantial interdiffusion of S and Te occurred after heat treatment at a temperature of 550 °C, resulting in formation of S-rich and Te-rich CdSxTe1−x alloy at the CdS/CdTe interface, with S and Te atomic concentration of ∼9% and 11% diffused into the CdTe and the CdS films, respectively.

Keywords

AnnealingII–VISemiconducting
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 5 , 14 March 2011 , pp. 697 - 705
Copyright
Copyright © Materials Research Society 2011

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