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The structure and property characteristics of amorphous/nanocrystalline silicon produced by ball milling

Published online by Cambridge University Press:  03 March 2011

T.D. Shen ,
C.C. Koch ,
T.L. McCormick ,
R.J. Nemanich ,
J.Y. Huang  and
J.G. Huang
T.D. Shen
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
C.C. Koch
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
T.L. McCormick
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
J.Y. Huang
Affiliation:
Laboratory of Atomic Imaging of Solids, Institute of Metal Research, Academia Sinica, 72 Wenhua Road, Shenyang 110015, People's Republic of China
J.G. Huang
Affiliation:
Laboratory of High Tc Superconductivity, Institute of Metal Research, Academia Sinica, 72 Wenhua Road, Shenyang 110015, People's Republic of China
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Abstract

The structural transformation of polycrystalline Si induced by high energy ball milling has been studied. The structure and property characteristics of the milled powder have been investigated by x-ray diffraction, scanning electron microscopy, high-resolution electron microscopy, differential scanning calorimetry, Raman scattering, and infrared absorption spectroscopy. Two phase amorphous and nanocrystalline Si has been produced by ball milling of polycrystalline elemental Si. The nanocrystalline components contain some defects such as dislocations, twins, and stacking faults which are typical of defects existing in conventional coarse-grained polycrystalline materials. The volume fraction of amorphous Si is about 15% while the average size of nanocrystalline grains is about 8 nm. Amorphous elemental Si without combined oxygen can be obtained by ball milling. The distribution of amorphous Si and the size of nanocrystalline Si crystallites is not homogeneous in the milled powder. The amorphous Si formed is concentrated near the surface of milled particles while the grain size of nanocrystalline Si ranges from 3 to 20 nm. Structurally, the amorphous silicon component prepared by ball milling is similar to that obtained by ion implantation or chemical vapor deposition. The amorphous Si formed exhibits a crystallization temperature of about 660 °C at a heating rate of 40 K/min and crystallization activation energy of about 268 kJ/mol. Two possible amorphization mechanisms, i.e., pressure-induced amorphization and crystallite-refinement-induced amorphization, are proposed for the amorphization of Si induced by ball milling.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 1 , January 1995 , pp. 139 - 148
Copyright
Copyright © Materials Research Society 1995

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