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Structure and chemical characteristics of tin oxide films prepared by reactive-ion-assisted deposition as a function of oxygen ion beam energy

Published online by Cambridge University Press:  31 January 2011

Seok-Kyun Song ,
Daeil Kim ,
Steven Kim ,
Seok-Keun Koh ,
Hyung-Jin Jung ,
Jeong-Young Lee  and
Hong-Koo Baik
Seok-Kyun Song
Affiliation:
Plasmion Co., 50 Harrison Street, Hoboken, New Jersey 07030
Daeil Kim
Affiliation:
Plasmion Co., 50 Harrison Street, Hoboken, New Jersey 07030
Steven Kim
Affiliation:
Plasmion Co., 50 Harrison Street, Hoboken, New Jersey 07030
Seok-Keun Koh
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650 Korea
Hyung-Jin Jung
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650 Korea
Jeong-Young Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yousung Ku, Kusung Taejeon, Korea
Hong-Koo Baik
Affiliation:
Department of Metallurgical Engineering, Yonsei University, Seodamoon, Shinchon 134, Seoul 120–749, Korea
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Abstract

Tin oxide films were deposited on amorphous SiO2/Si and Si (100) substrates by ion-assisted deposition (IAD) at various ion beam potentials (VI) at room temperature and a working pressure of 8 × 10−5 torr. The structural and chemical properties of the as-grown tin oxide films were investigated to determine the effects of the oxygen ion/atom arrival ratio (Ri). X-ray diffraction patterns indicated that the as-grown films with different average energy per atom (Eave) showed different growth directions. The as-grown films with oxygen/Sn ratio (NO/NSn) of 2.03 and 2.02 had preferred orientation of (101) and (002), respectively. In addition, the as-grown film with low Ri was amorphous. Comparison of the observed d spacings with those for standard SnO2 samples, indicated that the crystalline as-grown films had compressive and tensile stress depending on Eave. In transmission electron microscopy analysis, a buffer layer of amorphous tin oxide was observed at the interface between the substrate and the film, and the crystalline grains were grown on this buffer layer. The crystalline grains were arranged in large spherical clusters, and this shape directly affected surface roughness. Rutherford backscattering spectroscopy spectra showed that the tin oxide thin films were inhomogeneous. The density of films decreased and the porosity and oxygen trapped in the films increased with increasing Ri. The densest film had about 6% porosity.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 9 , September 2000 , pp. 1911 - 1921
Copyright
Copyright © Materials Research Society 2000

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