Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T23:07:51.543Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural, electrical, and optical property studies of indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures

Published online by Cambridge University Press:  31 January 2011

M. S. Han ,
T. W. Kang  and
T. W. Kim
M. S. Han
Affiliation:
Department of Physics, Dongguk University, Seoul 100–715, Korea
T. W. Kang*
Affiliation:
Department of Physics, Dongguk University, Seoul 100–715, Korea
T. W. Kim
Affiliation:
Department of Physics, Kwangwoon University, Seoul 139–701, Korea
*
a) Address all correspondence to this author.
Get access

Abstract

Transmission electron microsopy (TEM), Hall effect, and Fourier transform infrared (FTIR) transmission measurements were performed to investigate the structural, electrical, and optical properties of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on Cd0.96Zn0.04Te (211) B substrates by molecular-beam epitaxy. The TEM measurements showed that high-quality Hg0.8Cd0.2Te epitaxial layers with interfacial abruptnesses were grown on the Cd0.96Zn0.04Te substrates. The Van der Pauw Hall effect measurements on typical indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures with a doping concentration of 6 × 1016 cm−3 at 10 K in a magnetic field of 0.5 T yielded a carrier density and a mobility of 2.2 × 1016 cm−3 and 40,000 cm2/V s, respectively. The FTIR spectra showed that the absorption edges of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures shifted to a shorter wavelength range than those of the undoped samples, which was caused by the Burstein–Moss effect. The FTIR spectra also showed that the transmittance intensities of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures increased compared with those of the undoped heterostructures, which is due to the compensation of the Hg vacancy defects by the indium atoms. These results indicate that the indium-doped Hg0.8Cd0.2Te epitaxial layers were high-quality n-type layers and that p-HgxCd1−xTe epilayers can be grown on indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures for the fabrication of HgxCd1−xTe photoconductors and photodiodes.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 7 , July 1999 , pp. 2778 - 2782
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Faurie, J.P. and Million, A., J. Cryst. Growth 54, 582 (1981).CrossRefGoogle Scholar
2.Boukerche, M., Reno, J., Sou, I.K., Hsu, C., and Faurie, J.P., Appl. Phys. Lett. 48, 1733 (1986).CrossRefGoogle Scholar
3.Skauli, T., Steen, H., Colin, T., Helgesen, P., Lovold, S., Elliott, C.T., Gordon, N.T., Phillips, T.J., and White, A.M., Appl. Phys. Lett. 68, 1235 (1996).CrossRefGoogle Scholar
4.Temofonte, T.A., Noreika, A.J., Bevan, M.J., Emtage, P.R., Seller, C.F., and Mitra, P., J. Vac. Sci. Technol. A 7, 440 (1989).CrossRefGoogle Scholar
5.Gough, J.S., Houlton, M.R., Irvine, S.J.C., Shaw, N., Young, M.L., and Astles, M.G., J. Vac. Sci. Technol. B 9, 1687 (1991).CrossRefGoogle Scholar
6.Noreika, A.J., Farrow, R.F.C., Shirland, F.A., Takei, W.J., and Greggi, J. Jr., J. Vac. Sci. Technol. A 4, 2081 (1986).CrossRefGoogle Scholar
7.Boukerche, M., Yoo, S., Sou, I.K., DeSouza, M., and Faurie, J.P., J. Vac. Sci. Technol. A 6, 2623 (1988).CrossRefGoogle Scholar
8.Bourkerche, M., Reno, R., Sou, I.K., Hsu, C., and Faurie, J.P., Appl. Phys. Lett. 48, 1733 (1986).CrossRefGoogle Scholar
9.Lyubomirsky, L., Lyakhovitskaya, V., Triboulet, R., and Cahen, D., J. Cryst. Growth, 159, 1148 (1996).CrossRefGoogle Scholar
10.Pankove, J.I., Optical Processes in Semiconductors (Dover, New York, 1971).Google Scholar
11.Yamada, S.Y., Phys. Stat. Sol. 26, 77 (1968).CrossRefGoogle Scholar
12.Vydyanath, M.R., J. Electrochem. Soc. 128, 2619 (1981).CrossRefGoogle Scholar
13.Bicknell, R.N., Giles, N.C., Schetzina, J.F., and Hitzan, C., J. Vac. Sci. Technol. A 5, 3059 (1987).CrossRefGoogle Scholar
14.Boukerche, M., Wijewarnasuriya, P.S., Sivananthan, S., Sou, I.K., Kim, Y.J., Mahavadi, K.K., and Faurie, J.P., J. Vac. Sci. Technol. A 6, 2830 (1988).CrossRefGoogle Scholar