Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-27T01:37:05.144Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural characterization and thermal stability of W/Si multilayers

Published online by Cambridge University Press:  03 March 2011

M. Brunel ,
S. Enzo ,
M. Jergel ,
S. Luby ,
E. Majkova  and
I. Vavra
M. Brunel
Affiliation:
Laboratory of Crystallography, CNRS, 38042 Grenoble, France
S. Enzo
Affiliation:
Department of Physical Chemistry, DD 2137, 30123 Venice, Italy
M. Jergel
Affiliation:
Institute of Physics, Slovak Academy of Science, 842 28, Bratislava, Slovakia
S. Luby
Affiliation:
Institute of Physics, Slovak Academy of Science, 842 28, Bratislava, Slovakia
E. Majkova
Affiliation:
Institute of Physics, Slovak Academy of Science, 842 28, Bratislava, Slovakia
I. Vavra
Affiliation:
Institute of Electrical Engineering, Slovak Academy of Science, 842 39, Bratislava, Slovakia
Get access

Abstract

Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 10 , October 1993 , pp. 2600 - 2607
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Chakraborty, P., Int. J. Mod. Phys. B 5, 343 (1991).CrossRefGoogle Scholar
2Ziegler, E., Lepetre, Y., Joksch, S., Saile, V., Mourikis, S., Viccare, P. J., Rolland, G., and Laugier, F., Rev. Sci. Instrum. 60, 1999 (1989).CrossRefGoogle Scholar
3Murarka, S. P., Silicides for VLSI Application (Academic Press, New York, 1983).Google Scholar
4Luby, S., Majkova, E., Lobotka, P., Vavra, I., Jergel, M., Senderak, R., and Grno, J., Physica C 197, 35 (1992).CrossRefGoogle Scholar
5Majkova, E., Lobotka, P., Vavra, I., Luby, S., Jergel, M., Benacka, S., Senderak, R., George, B., and Vaezzadeh, M., Appl. Surf. Sci. 65/66, 752 (1993).CrossRefGoogle Scholar
6Jiang, Z., Hiang, X., Liu, W., and Wu, Z., J. Appl. Phys. 65, 196 (1989).CrossRefGoogle Scholar
7Dupuis, V., Ravet, M. F., Tete, C., Piecuch, M., and Vidal, B., J. Appl. Phys. 68, 3384 (1990).Google Scholar
8Kortright, J.B, Joksch, S., and Ziegler, E., J. Appl. Phys. 69, 168 (1991).CrossRefGoogle Scholar
9Molarius, J. M., Franssila, S., Drozdy, G., and Saarilahti, J., Appl. Surf. Sci. 53, 383 (1991).CrossRefGoogle Scholar
10Enzo, S., Benedetti, A., Fagherazzi, G., and Polizzi, S., J. Appl. Cryst. 21, 536 (1988).CrossRefGoogle Scholar
11Guinier, A., X-ray Diffraction (Freeman, San Francisco, CA, 1963).Google Scholar
12Klug, H. P. and Alexander, L. A., X-ray Diffraction for Polycrystalline and Amorphous Materials (John Wiley, New York, 1974).Google Scholar
13Cargill, G. S. III, Solid State Physics, edited by Seitz, F. (Academic Press, New York, 1975), Vol. 30.Google Scholar
14Meyerheim, L., Lengeler, B., and Goebel, H. E., J. Appl. Phys. 68, 2694 (1990).CrossRefGoogle Scholar
15Jiang, X. M., Xian, D. C., and Wu, Z. Q., Appl. Phys. Lett. 57, 2549 (1990).CrossRefGoogle Scholar
16Lucas, C. A., Nguyen, T. D., and Kortright, J. B., Appl. Phys. Lett. 59, 2100 (1991).CrossRefGoogle Scholar
17Smithells, C. J., Metals Reference Book, 5th ed. (Butterworth, Washington, DC, 1976).Google Scholar
18Glassy Metals I and II, edited by Güntherodt, H-J. and Beck, H. (Springer-Verlag, Berlin, 1981 and 1983).CrossRefGoogle Scholar