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Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Published online by Cambridge University Press:  24 July 2012

Ruggero Anzalone ,
Massimo Camarda ,
Christopher Locke ,
Josè Carballo ,
Nicolò Piluso ,
Antonino La Magna ,
Alex A. Volinsky ,
Stephen E. Saddow  and
Francesco La Via
Ruggero Anzalone*
Affiliation:
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
Massimo Camarda
Affiliation:
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
Christopher Locke
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620
Josè Carballo
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620
Nicolò Piluso
Affiliation:
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
Antonino La Magna
Affiliation:
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
Alex A. Volinsky
Affiliation:
Department of Mechanical Engineering, University of South Florida Tampa, Florida 33620
Stephen E. Saddow
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620; and Department of Molecular Pharmacology and Physiology, University of South Florida, Tampa, Florida 33620
Francesco La Via
Affiliation:
IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

To understand the impact that the growth rate has on the residual stress of chemical vapor deposition-grown 3C–SiC heteroepitaxial films on Si substrates, growth experiments were performed. The film thickness was held constant at ∼2.5 μm independent of the growth rate so as to allow for direct film comparison as a function of the growth rate. Stress analysis performed by profilometer curvature measurement, μιχρο-Raman shift analysis and micro-machined freestanding structures, show an apparent disagreement about the stress nature. This incongruity between the experimental data can be explained assuming a strong stress field located in the substrate related to defects generated in the silicon during the growth process.

Keywords

3C-SiC heteroepitaxygrowth rateresidual stress
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 129 - 135
Copyright
Copyright © Materials Research Society 2012

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References

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