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Stress in evaporated films used in GaAs processing

Published online by Cambridge University Press:  08 February 2011

W.A. Strifler  and
C.W. Bates Jr.
W.A. Strifler
Affiliation:
Watkins Johnson Company, 3333 Hillview Avenue, Palo Alto, California 94304 and Department of Electrical Engineering, Stanford University, Stanford, California 94305
C.W. Bates Jr.
Affiliation:
Department of Materials Science and Department of Electrical Engineering, Stanford University, Stanford, California 94305
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Abstract

A simple and practical method is described for determining the residual stress in vapor deposited thin films that are less than 1000 Å in thickness. The method relies on the evaporation of thin films onto prefabricated micro-cantilever beams of SiO2. The vertical deflection at the end of the beam is measured using an optical microscope to determine the average film stress with a resolution of 25 MPa. Calculations show that the vapor deposition of metal films onto these beams does not induce significant heating, so the thermal component of residual film stress is minimal. The micro-cantilever technique is used to measure the film stress in 500 Å films of Al, Ti, Pt, Au, Ni, and Ge. These measured values are compared to similar measurements reported in the literature.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 3 , March 1991 , pp. 548 - 552
Copyright
Copyright © Materials Research Society 1991

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