Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-23T05:44:40.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress evolution in Si during low-energy ion bombardment

Published online by Cambridge University Press:  25 November 2014

Yohei Ishii ,
Charbel S. Madi ,
Michael J. Aziz  and
Eric Chason
Yohei Ishii
Affiliation:
Brown University, School of Engineering, Providence, Rhode Island 02912, USA; and Hitachi High Technologies America, Inc, Semiconductor Equipment Division, Dallas, Texas 75261-2208, USA
Charbel S. Madi
Affiliation:
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA; and Department of Physics, American University of Beirut, Beirut 1107 2020, Lebanon
Michael J. Aziz
Affiliation:
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA
Eric Chason*
Affiliation:
Brown University, School of Engineering, Providence, Rhode Island 02912, USA
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Measurements of stress evolution during low-energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady-state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress evolution and relaxation mechanisms, we account for the measured behavior with a model for viscous relaxation that includes the ion-induced generation and annihilation of flow defects in an amorphous Si surface layer. The analysis indicates that bimolecular annihilation (i.e., defect recombination) is the dominant mechanism controlling the defect concentration both during irradiation and after the cessation of irradiation. From the analysis, we determine a value for the fluidity per flow defect.

Keywords

ion–solid interactionsdefectsradiation effects
Type
Articles
Information
Journal of Materials Research , Volume 29 , Issue 24 , 28 December 2014 , pp. 2942 - 2948
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Chason, E., Picraux, S.T., Poate, J.M., Borland, J.O., Current, M.I., Diaz de la Rubia, T., Eaglesham, D.J., Holland, O.W., Law, M.E., Magee, C.W., Mayer, J.W., Melngailis, J., and Tasch, A.F.: Ion beams in silicon processing and characterization. J. Appl. Phys. 81, 6513 (1997).Google Scholar
Medhekar, N.V., Chan, W.L., Shenoy, V.B., and Chason, E.: Stress-enhanced pattern formation on surfaces during low-energy ion-bombardment. J. Phys.: Condens. Matter 21, 224021 (2009).Google Scholar
Volkert, C.A.: Stress and plastic flow in silicon during amorphization by ion bombardment. J. Appl. Phys. 70, 3521 (1991).Google Scholar
Volkert, C.A. and Polman, A.: Radiation-enhanced plastic flow of covalent materials during ion irradiation. Mater. Res. Soc. Symp. Proc. 235, 3 (1992).Google Scholar
Snoeks, E., Polman, A., and Volkert, C.A.: Densification, anisotropic deformation, and plastic flow of SiO2 during MeV heavy ion irradiation. Appl. Phys. Lett. 65, 2487 (1994).Google Scholar
Dahmen, K., Giesen, M., Ikonomov, J., Starbova, K., and Ibach, H.: Steady-state surface stress induced in noble gas sputtering. Thin Solid Films 428, 6 (2003).CrossRefGoogle Scholar
Chan, W.L., Chason, E., and Iamsumang, C.: Surface stress induced in Cu foils during and after low energy ion bombardment. Nucl. Instrum. Methods Phys. Res., Sect. B 257, 428 (2007).Google Scholar
Chan, W.L., Zhao, K., Vo, N., Ashkenazy, Y., Cahill, D.G., and Averback, R.S.: Stress evolution in platinum thin films during low-energy ion irradiation. Phys. Rev. B 77, 205405 (2008).Google Scholar
Debelle, A., Abadias, G., Michel, A., and Jaouen, C.: Stress field in sputtered thin films: Ion irradiation as a tool to induce relaxation and investigate the origin of growth stress. Appl. Phys. Lett. 84, 5034 (2004).Google Scholar
Chan, W.L. and Chason, E.: Stress evolution and defect diffusion in Cu during low energy ion irradiation: Experiments and modeling. J. Vac. Sci. Technol., A 26, 44 (2007).Google Scholar
Kalyanasumdaram, N., Moore, M.C., Freund, J.B., and Johnson, H.T.: Stress evolution due to medium-energy ion bombardment of silicon. Acta. Mater. 54, 483 (2006).Google Scholar
Brongersma, M.L., Snoeks, E., van Dillen, T., and Polman, A.: Origin of MeV ion irradiation-induced stress changes in SiO2. J. Appl. Phys. 88, 59 (2000).Google Scholar
Mayr, S.G., Ashkenazy, Y., Albe, K., and Averback, R.S.: Mechanisms of radiation-induced viscous flow: Role of point defects. Phys. Rev. Lett. 90, 055505 (2003).Google Scholar
Witvrouw, A. and Spaepen, F.: Viscosity and elastic constants of amorphous Si and Ge. J. Appl. Phys. 74, 7154 (1993).Google Scholar
Chason, E.: A kinetic analysis of residual stress evolution in polycrystalline thin films. Thin Solid Films 526, 1 (2012).Google Scholar
Stoney, G.G.: The tension of metallic films deposited by electrolysis. Proc. R. Soc. Lond. A 82, 172 (1909).Google Scholar
Freund, L.B. and Suresh, S.: Thin Film Materials (Cambridge University Press, Cambridge, UK, 2003).Google Scholar
Ziegler, J.F. and Biersack, J.P.: SRIM-2008 (IBM Co., Yorktown, NY, 1984–2008).Google Scholar
Madi, C.S., George, H.B., and Aziz, M.J.: Linear stability and instability patterns in ion-sputtered silicon. J. Phys.: Condens. Matter 21, 224010 (2009).Google Scholar
Madi, C.S.: Linear Stability and Instability Patterns in Ion Bombarded Silicon Surfaces. Ph.D Thesis, Harvard University, Cambridge, MA, 2012.Google Scholar
Jenkins, M.W.: New preferential etch for defects in silicon-crystals. J. Electrochem. Soc. 124, 757 (1977).Google Scholar
George, H.B., Tang, Y., Chen, X., Li, J., Hutchinson, J.W., Golovchenko, J.A., and Aziz, M.J.: Nanopore fabrication in amorphous Si: Viscous flow model and comparison to experiment. J. Appl. Phys. 108, 014310 (2010).Google Scholar
Brongersma, M.L., Snoeks, E., and Polman, A.: Temperature dependence of MeV heavy ion irradiation-induced viscous flow in SiO2. Appl. Phys. Lett. 71, 1628 (1997).Google Scholar
Norris, S.A., Samela, J., Bukonte, L., Backman, M., Djurabekova, F., Nordlund, K., Madi, C.S., Brenner, M.P., and Aziz, M.J.: Molecular dynamics of single-particle impacts predicts phase diagrams for large scale pattern formation. Nat. Commun. 2, 276 (2011).CrossRefGoogle ScholarPubMed
Madi, C.S., Anzenberg, E., Ludwig, K.F., and Aziz, M.J.: Mass Redistribution Causes the Structural Richness of Ion-Irradiated Surfaces. Phys. Rev. Lett. 106, 066101 (2011) Erratum 110, 069903.Google Scholar
Tai, K., Averback, R.S., Bellon, P., Ashkenazy, Y., and Stumphy, B.: Temperature dependence of irradiation-induced creep in dilute nanostructured Cu-W alloys. J. Nucl. Mater. 422, 8 (2012).Google Scholar
Coffa, S. and Libertino, S.: Room-temperature diffusivity of self-interstitials and vacancies in ion-implanted Si probed by in situ measurements. Appl. Phys. Lett. 73, 3369 (1998).Google Scholar
Fahey, P.M., Griffin, P.B., and Plummer, J.D.: Point-defects and dopant diffusion in silicon. Rev. Mod. Phys. 61, 289 (1989).Google Scholar
Bronner, G.B. and Plummer, J.D.: Gettering of gold in silicon - A tool for understanding the properties of silicon interstitials. J. Appl. Phys. 61, 5286 (1987).Google Scholar