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Stable thin film resistors using double layer structure

Published online by Cambridge University Press:  03 March 2011

Q.X. Jia ,
H.J. Lee ,
E. Ma ,
W.A. Anderson  and
F.M. Collins
Q.X. Jia
Affiliation:
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
H.J. Lee
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Buffalo, New York 14260
E. Ma
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Buffalo, New York 14260
W.A. Anderson
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Buffalo, New York 14260
F.M. Collins
Affiliation:
Ohmtek, Inc. 2160 Liberty Drive, Niagara Falls, New York 14304
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Abstract

Highly stable bilayer thin film resistors, which consist of an underlying layer of tantalum nitride and of a capping layer of ruthenium oxide, were developed by taking advantage of the desired characteristics of two different materials in a single system. The resistors fabricated in such a way were highly stable under power loading or thermal cycling. Resistors with one digit temperature coefficient of resistance (TCR) could be easily controlled by the layer thickness ratio of the tantalum nitride to the ruthenium oxide and the ex situ annealing temperature or duration. Auger electron spectroscopy depth profile on the thin films indicates that the ruthenium oxide layer is well defined for the as-deposited form. Nevertheless, interdiffusion takes place after thermal treatment of the bilayer which is used to tune the temperature coefficient of resistance and to stabilize the resistance of the resistors.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 6 , June 1995 , pp. 1523 - 1528
Copyright
Copyright © Materials Research Society 1995

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References

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