Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-23T16:36:11.281Z Has data issue: false hasContentIssue false
  • English
  • Français

SrBi2Ta2O9 thin films made by liquid source metal-organic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Yongfei Zhu ,
Seshu B. Desu ,
Tingkai Li ,
Sasangan Ramanathan  and
Masaya Nagata
Yongfei Zhu
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061
Seshu B. Desu*
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061
Tingkai Li
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061
Sasangan Ramanathan
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061
Masaya Nagata
Affiliation:
Functional Devices Laboratories, Sharp Corporation, Chiba 277, Japan
*
a)Author to whom correspondence should be addressed.
Get access

Abstract

A liquid source metal-organic chemical vapor deposition system was installed to deposit SrBi2Ta2O9 (SBT) thin films on sapphire and Pt/Ti/SiO2/Si substrates. The process parameters such as deposition temperature and pressure, and ratio of Sr: Bi: Ta in the precursor solutions were optimized to achieve stoichiometric films with good reproducible ferroelectric properties. It was found that the nucleation of SBT started at a deposition temperature close to 500 °C and grain growth dominated at 700 °C and higher temperatures. With increasing deposition temperatures, the grain size of SBT thin films increased from 0.01 μm to 0.2 μm; however, the surface roughness and porosity of the films also increased. To fabricate specular SBT films, the films had to be deposited at lower temperature and annealed at higher temperature for grain growth. A two-step deposition process was developed which resulted in high quality films in terms of uniformity, surface morphology, and ferroelectric properties. The key to the success of this process was the homogeneous nucleation sites at lower deposition temperature during the first step and subsequent dense film growth at higher temperature. The two-step deposition process resulted in dense, homogeneous films with less surface roughness and improved ferroelectric properties. SBT thin films with a grain size of about 0.1 μm exhibited the following properties: thickness: 0.16–0.19 μm; 2Pr: 7.8–11.4 μC/cm2 at 5 V; Ec: 50–65 kV/cm; Ileakage: 8.0–9.5 × 10−9 Acm−2 at 150 kV/cm; dielectric constant: 100–200; and fatigue rate: 0.94–0.98 after 1010 cycles at 5 V.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 3 , March 1997 , pp. 783 - 792
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ramtron Corporation (Colorado Springs, CO) started introducing its 4Kbit, 8Kbit, and 16Kbit FRAM's in 1988.Google Scholar
2.Spierings, G. A. C. M., Ulenaers, M. J. E., Kampschoer, G. L. M., van Hal, H. A. M., and Larsen, P. K., J. Appl. Phys. 70, 2290 (1991).CrossRefGoogle Scholar
3.Peng, C. H. and Desu, S. B., Appl. Phys. Lett. 61, 16 (1992).CrossRefGoogle Scholar
4.Chang, J. F. and Desu, S. B., J. Mater. Res. 9, 995 (1994).Google Scholar
5.Yoon, D. S., Kim, C. J., Lee, J. S., Lee, W. J., and No, K., J. Mater. Res. 9, 420 (1994).CrossRefGoogle Scholar
6.Si, J. and Desu, S. B., J. Mater. Res. 8, 2644 (1993).CrossRefGoogle Scholar
7.Bursill, L. A., Reaney, I. M., Vijay, D. P., and Desu, S. B., J. Appl. Phys. 75, 1521 (1994).CrossRefGoogle Scholar
8.Fazan, P. C., Integ. Ferroelec. 4, 247 (1994).CrossRefGoogle Scholar
9.Kinney, W., Integ. Ferroelec. 4, 131 (1994).CrossRefGoogle Scholar
10.Paz de Araujo, C. A., Cuchiaro, J. D., Scott, M. C., and McMillan, L. D., International Patent Publication No. WO 93/12542 (24 June 1993).Google Scholar
11.Amanuma, K., Hase, T., and Miyasaka, Y., Appl. Phys. Lett. 66, 221 (1995).CrossRefGoogle Scholar
12.Li, T. K., Chen, T-C., Peng, C. H., and Desu, S. B., 7th Int. Symp. on Integrated Ferroelectrics, Colorado Springs, CO, March 20–22, 1995.Google Scholar
13.Klee, M., 7th Int. Symp. on Integrated Ferroelectrics, Colorado Springs, CO, March 20–22, 1995.Google Scholar
14.Desu, S. B. and Li, T. K., Mater. Sci. Eng. B32, 562 (1995).Google Scholar
15.Desu, S. B. and Vijay, D. P., Mater. Sci. Eng. B32, 75 (1995).CrossRefGoogle Scholar
16.Dat, R., Lee, J. K., Basceri, C., Auciello, O., and Kingon, A., 7th Int. Symp. on Integrated Ferroelectrics, Colorado Springs, CO, March 20–22, 1995.Google Scholar
17.Kirlin, P. S., Binder, R. L., and Gardiner, R. A., U.S. Patent 5 204 314 (1993).Google Scholar
18.Tao, Wei, Desu, S. B., and Li, T. K., Mater. Lett. 23, 177 (1995).CrossRefGoogle Scholar