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Solid/solid interfacial reactions between Sn–0.7 wt% Cu and Ni–7 wt% V

Published online by Cambridge University Press:  31 January 2011

Chih-chi Chen ,
Sinn-wen Chen  and
Chih-horng Chang
Chih-chi Chen
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan 300, Republic of China
Sinn-wen Chen*
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan 300, Republic of China
Chih-horng Chang
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan 300, Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Sn–0.7 wt% Cu alloy is an important Pb-free solder, and Ni–7 wt% V is the major diffusion barrier layer material of flip chip technology. Reactions at the Sn–0.7 wt% Cu/Ni–7 wt% V interface are examined at 160, 180, and 210 °C. Only the Cu6Sn5 phase is formed in the Sn–0.7 wt% Cu/Ni–7 wt% V couple reacted at 160 and 180 °C; however, in addition to the Cu6Sn5 and Ni3Sn4 phases, a quaternary Q phase is formed in the Sn–0.7 wt% Cu/Ni–7 wt% V couple reacted at 210 °C. The Q phase is a mixture of nanocrystalline Ni3Sn4 phase and an amorphous phase. With longer reaction time at 210 °C in the Ni–V/Q/Sn–Cu couple where the Q phase is in direct contact with solder, the Ni3Sn4 phase nucleates inside the preformed Q phase, and the alternating layer phenomenon Ni–V/Q/Ni3Sn4/Q/Ni3Sn4/Cu6Sn5/Sn–Cu is observed. The interesting solid state amorphization and alternating layer phenomena at 210 °C are primarily caused by the fact that Sn and Cu are fast diffusing species, while V is relatively immobile.

Keywords

Phase transformationSolderingV
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 7 , July 2008 , pp. 1895 - 1901
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Frear, D.R., Jang, J.W., Lin, J.K.Zhang, C.: Pb-free solders for flip-chip interconnects. JOM 53(6), 28 2001CrossRefGoogle Scholar
2Laurila, T., Vuorinen, V.Kivilahti, J.K.: Interfacial reactions between lead-free solders and common base materials. Mater. Sci. Eng., R 49, 1 2005CrossRefGoogle Scholar
3Liu, C.Y., Tu, K.N., Sheng, T.T., Tung, C.H., Frear, D.R.Elenius, P.: Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization. J. Appl. Phys. 87, 750 2000CrossRefGoogle Scholar
4Li, M., Zhang, F., Chen, W.T., Zeng, K., Tu, K.N., Balkan, H.Elenius, P.: Interfacial microstructure evolution between eutectic SnAgCu solder and Al/Ni(V)/Cu thin films. J. Mater. Res. 17, 1612 2002CrossRefGoogle Scholar
5Chen, C-C., Chen, S-W.Kao, C-Y.: Interfacial reactions in the Sn–(Ag)/(Ni,V) couples and phase equilibria of the Sn–Ni–V system at the Sn-rich corner. J. Electron. Mater. 35, 922 2006CrossRefGoogle Scholar
6Chen, C-C.Chen, S-W.: The Sn/Ni–7 wt% V interfacial reactions. J. Electron. Mater. 35, 1701 2006CrossRefGoogle Scholar
7Chen, S-W., Chen, C-C.Chang, C-H.: Interfacial reactions in Sn/Ni–7 wt% V couple. Scr. Metall. 56, 453 2007CrossRefGoogle Scholar
8Chen, S-W.Chen, C-C.: Interfacial reactions in Sn–0.7 wt% Cu/Ni–V couples at 250 °C. J. Electron. Mater. 36, 1121 2007CrossRefGoogle Scholar
9Official Journal of the European Union, pp. L 37/19-L 37/23, 13.2.2003CrossRefGoogle Scholar
10Official Journal of the European Union, pp. L 37/24-L 37/38, 13.2.2003CrossRefGoogle Scholar
11Abtew, M.Selvaduray, G.: Lead-free solders in microelectronics. Mater. Sci. Eng., R 27, 95 2000CrossRefGoogle Scholar
12Glazer, J.: Metallurgy of low temperature Pb-free solders for electronic assembly. Int. Mater. Rev. 40(2), 65 1995CrossRefGoogle Scholar
13Hsu, H-F.Chen, S-W.: Phase equilibria of the Sn–Ag–Ni ternary system and interfacial reactions at the Sn–Ag/Ni joints. Acta Mater. 52, 2541 2004CrossRefGoogle Scholar
14Chen, C-M.Chen, S-W.: Electromigration effect upon the Sn–0.7 wt% Cu/Ni and Sn–3.5wt%Ag/Ni interfacial reactions. J. Appl. Phys. 90, 1208 2001CrossRefGoogle Scholar
15Chen, W.T., Ho, C.E.Kao, C.R.: Effect of Cu concentration on the interfacial reactions between Ni and Sn–Cu solders. J. Mater. Res. 17, 263 2002CrossRefGoogle Scholar
16Chen, S-W., Wu, S-H.Lee, S-W.: Interfacial reactions in the Sn–(Cu)/Ni, Sn–(Ni)/Cu and Sn/(Cu, Ni) systems. J. Electron. Mater. 32, 1188 2003CrossRefGoogle Scholar
17Kim, K.S., Huh, S.H.Suganuma, K.: Effects of intermetallic compounds on properties of Sn–Ag–Cu lead-free soldered joints. J. Alloys Compd. 352, 226 2003CrossRefGoogle Scholar
18Choi, W.J., Yeh, E.C.C.Tu, K.N.: Mean-time-to-failure study of flip chip solder joints on Cu/Ni(V)/Al thin-film under-bump-metallization. J. Appl. Phys. 94(9), 5665 2003CrossRefGoogle Scholar
19Wang, C-H.Chen, S-W.: Isothermal section of the ternary Sn–Cu–Ni system and interfacial reactions in the Sn–Cu/Ni couples at 800 °C. Metall. Mater. Trans. A 34, 2281 2003CrossRefGoogle Scholar
20Cheng, M.D., Yen, S.F.Chuang, T.H.: Intermetallic compounds formed during the reflow and aging of Sn–3.8Ag–0.7Cu and Sn–20In–2Ag–0.5Cu solder ball grid array packages. J. Electron. Mater. 33, 171 2004CrossRefGoogle Scholar
21Wang, S.J., Kao, J.J.Liu, C.Y.: Correlation between interfacial reactions and mechanical strengths of Sn(Cu)/Ni(P) solder bumps. J. Electron. Mater. 33, 1130 2004CrossRefGoogle Scholar
22Pang, J.H.L., Xu, L., Shi, X.Q., Zhou, W.Ngoh, S.L.: Intermetallic growth studies on Sn–Ag–Cu lead-free solder joints. J. Electron. Mater. 33, 1219 2004CrossRefGoogle Scholar
23Luo, W.C., Ho, C.E., Tsai, J.Y., Lin, Y.L.Kao, C.R.: Solid-state reactions between Ni and Sn–Ag–Cu solders with different Cu concentrations. Mater. Sci. Eng., A 396, 385 2005CrossRefGoogle Scholar
24Wang, C-H.Chen, S-W.: Sn–0.7 wt% Cu/Ni interfacial reactions at 250 °C. Acta Mater. 54, 247 2006CrossRefGoogle Scholar
25Nash, P.Nash, A.: The Ni–Sn (nickel–tin) system. Bull. Alloy Phase Diagrams 6, 350 1985CrossRefGoogle Scholar
26Smith, J.F.: The Sn–V (tin–vanadium) system. Bull. Alloy Phase Diagrams 2, 210 1981CrossRefGoogle Scholar
27JCPDS No. 04-0851 International Center for Diffraction Data Newton Square, PA 2000Google Scholar
28JCPDS No. 04-0845 International Center for Diffraction Data Newton Square, PA 2000Google Scholar
29JCPDS No. 18-1391 International Center for Diffraction Data Newton Square, PA 2000Google Scholar
30JCPDS No. 86-2265 International Center for Diffraction Data Newton Square, PA 2000Google Scholar
31Lin, C-H., Chen, S-W.Wang, C-H.: Phase equilibria and solidification properties of Sn–Cu–Ni alloys. J. Electron. Mater. 31, 907 2002CrossRefGoogle Scholar
32Schwarz, R.B.Johnson, W.L.: Formation of an amorphous alloy by solid-state reaction of the pure polycrystalline metals. Phys. Rev. Lett. 51, 415 1983CrossRefGoogle Scholar
33Guilmin, P., Guyot, P.Marchal, G.: Amorphization of crystalline Co and Sn multilayers by solid state reaction. Phys. Lett. A 109, 174 1985CrossRefGoogle Scholar
34Herd, S.R., Tu, K.N.Ahn, K.Y.: Formation of an amorphous Rh–Si alloy by interfacial reaction between amorphous Si and crystalline Rh thin films. Appl. Phys. Lett. 42, 597 1983CrossRefGoogle Scholar
35Lur, W.Chen, L.J.: Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin-film and single-crystal silicon. Appl. Phys. Lett. 54, 1217 1989CrossRefGoogle Scholar
36Ouyang, C-P., Chang, J-J., Wen, J-F., Tien, L-C., Hwang, J.Pi, T-W.: Solid state amorphization at the room temperature deposited Ir/Si interface. J. Appl. Phys. 91, 1204 2002CrossRefGoogle Scholar
37Clemens, B.M., Johnson, W.L.Schwarz, R.B.: Amorphous zirconium-nickel films formed by solid state reactions. J. Non-Cryst. Solids 61 & 62, 817 1984CrossRefGoogle Scholar
38Saunders, N.Miodownik, A.P.: The Cu–Sn (copper–tin) system. Bull. Alloy Phase Diagrams 11, 278 1990CrossRefGoogle Scholar
39van Loo, F.J.J.: Multiphase diffusion in binary and ternary solid-state systems. Prog. Solid State Chem. 20, 47 1990CrossRefGoogle Scholar
40Shiau, F.Y.Chang, Y.A.: Amorphous phase formation by solid-state reaction between polycrystalline Co thin films and single-crystal GaAs. Appl. Phys. Lett. 55(15), 1510 1989CrossRefGoogle Scholar
41Verhoeven, J.D.: Fundamentals of Physical Metallurgy John Wiley & Sons New York 1975 137–167Google Scholar