Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-23T16:18:09.219Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid-phase reactions in Ir/(111)Si systems studied by means of x-ray emission spectroscopy

Published online by Cambridge University Press:  31 January 2011

E. Z. Kurmaev ,
V. R. Galakhov ,
S. N. Shamin ,
T. Rodríguez ,
A. Almendra ,
J. Sanz-Maudes ,
K. Göransson  and
I. Engström
E. Z. Kurmaev
Affiliation:
Institute of Metal Physics, Russian Academy of Science–Ural Division, 620219 Yekaterinburg GSP-170, Russia
V. R. Galakhov
Affiliation:
Institute of Metal Physics, Russian Academy of Science–Ural Division, 620219 Yekaterinburg GSP-170, Russia
S. N. Shamin
Affiliation:
Institute of Metal Physics, Russian Academy of Science–Ural Division, 620219 Yekaterinburg GSP-170, Russia
T. Rodríguez
Affiliation:
Dept. Tecnología Electrónica, ETSI Telecomunicación–Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
A. Almendra
Affiliation:
Dept. Tecnología Electrónica, ETSI Telecomunicación–Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
J. Sanz-Maudes
Affiliation:
Dept. Tecnología Electrónica, ETSI Telecomunicación–Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
K. Göransson
Affiliation:
Institute of Chemistry, University of Uppsala, Box 531, S-751 21, Uppsala, Sweden
I. Engström
Affiliation:
Institute of Chemistry, University of Uppsala, Box 531, S-751 21, Uppsala, Sweden
Get access

Extract

High energy resolved x-ray emission spectroscopy with variable electron beam excitation is applied for study of solid-phase reactions in the Ir/(111)Si system as a function of annealing temperature. The formation of Ir silicides as a function of depth is studied by measurements of Si L2,3 x-ray emission valence spectra at different electron excitation energies (3–10 keV), and the results are compared with those of Rutherford backscattering.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 7 , July 1998 , pp. 1950 - 1955
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Tsaur, B., Weeks, M. M., Trubiano, R., and Pellegrini, P. W., IEEE Electr. Dev. Lett. 9, 650 (1988).CrossRefGoogle Scholar
2.Tsaur, B., Chen, C. K., and Nechay, B. A., IEEE Electr. Dev. Lett. 11, 415 (1990).CrossRefGoogle Scholar
3.Rodríguez, T., Wolters, H., Fernandez, M., Almendra, A., da Silva, M. F., Clement, M., Soares, J. C., and Ballesteros, C., Appl. Surf. Sci. 73, 182 (1993).CrossRefGoogle Scholar
4.Rodríguez, T., Almendra, A., da Silva, M. F., Soares, J. C., Wolters, H., Rodriguez, A., and Sanz-Maudes, J., Nucl. Instrum. Methods in Phys. Res. B (in press).Google Scholar
5.Kurmaev, E. Z., Fedorenko, V. V., Shamin, S. N., Postnikov, A. V., Wiech, G., and Kim, Y., Physica Scripta T41, 288 (1992).CrossRefGoogle Scholar
6.Galakhov, V. R., Kurmaev, E. Z., Fedorenko, V. V., Elkohina, L. V., Shamin, S. N., Pivin, J. C., Zaima, S., and Kojima, J., Surf. Sci. (to be published).Google Scholar
7.Galakhov, V. R., Kurmaev, E. Z., Shamin, S. N., Elokhina, L. V., Yarmoshenko, Yu.M., and Bukharaev, A. A., Appl. Surf. Sci. 72, 73 (1993).CrossRefGoogle Scholar
8.Kurmaev, E. Z., Shamin, S. N., Galakhov, V. R., Wiech, G., Majkova, E., and Luby, S., J. Mater. Res. 10, 907 (1995).CrossRefGoogle Scholar
9.Doolittle, L. R., Rutherford Backscattering Data Manipulation Program, RUMP-3.4x User's Guides (Cornell University, Ithaca, NY, 1985, 1991).Google Scholar
10.Yakowitz, H. and Newbury, D. E., SEM/1976/I, II T (Research Institute, Chicago, 1976), p. 151.Google Scholar
11.Castaing, R., Adv. Electron. Electron Phys. 13, 317 (1960).CrossRefGoogle Scholar