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Solid state reactions between Ni3Al and SiC

Published online by Cambridge University Press:  31 January 2011

T. C. Chou
Affiliation:
Lockheed Missiles and Space Company, Inc., Research and Development Division, O-9310, B-204, 3251 Hanover Street, Palo Alto, California 94304
T. G. Nieh
Affiliation:
Lockheed Missiles and Space Company, Inc., Research and Development Division, O-9310, B-204, 3251 Hanover Street, Palo Alto, California 94304
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Abstract

Solid state reactions between SiC and Ni3Al were studied at 1000°C for different times. Multi-reaction-layers were generated in the interdiffusion zone. Cross-sectional views of the reaction zones show the presence of three distinguishable layers. The Ni3Al terminal component is followed by NiAl, Ni5.4Al1Si2, Ni(5.4−x)Al1Si2 + C layers, and the SiC terminal component. The Ni5.4Al1Si2 layer shows carbon precipitation free, while modulated carbon bands were formed in the Ni(5.4−x)Al1Si2 + C layer. The NiAl layer shows dramatic contrast difference with respect to the Ni3Al and Ni5.4Al1Si2 layers, and is bounded by the Ni3Al/NiAl and Ni5.4Al1Si2/NiAl phase boundaries. The kinetics of the NiAl formation is limited by diffusion, and the growth rate constant is measured to be 2 ⊠ 10−10 cm2/s. The thickness of the reaction zone on the SiC side is always thinner than that on the Ni3Al side and no parabolic growth rate is obeyed, suggesting that the decomposition of the SiC may be a rate limiting step for the SiC/Ni3Al reactions. The carbon precipitates were found to exist in either a disordered or partially ordered (graphitic) state, depending upon their locations from the SiC interface. The formation of NiAl phase is discussed based on an Al-rejection model, as a result of a prior formation of Ni–Al–Si ternary phase. A thermodynamic driving force for the SiC/Ni3Al reactions is suggested.

Type
Articles
Copyright
Copyright © Materials Research Society 1990

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References

1Bowman, R. and Noebe, R., Advanced Materials & Processes 136, 35 (1989).Google Scholar
2Chou, T. C., Scripta Metallurgica et Materialia 24 (2), 409 (1990).Google Scholar
3Nieh, T. G., Stephens, J. J., Wadsworth, J., and Liu, C. T., Proc. Interfaces in Polymer, Ceramic and Metal Matrix Composites, edited by Ishida, H. (Elsevier, New York, 1988), p. 215.Google Scholar
4Hansen, Phil. M., Constitution of Binary Alloys (McGraw-Hill, New York, 1958), p. 119.Google Scholar
5Guard, R. W. and Smith, E. A., J. Inst. Metals 88, 369 (1959).Google Scholar
6Ochiai, S., Oya, Y., and Suzuki, T., Acta Metall. 32, 289 (1984).CrossRefGoogle Scholar
7Katagiri, G., Ishida, H., and Ishitani, A., Carbon 26, 565 (1988).Google Scholar
8Hall, E. L., Kouh, Y. M., Jackson, M. R., and Mehan, R. L., Metall. Trans. A 14, 781 (1983).Google Scholar
9Jackson, M. R., Mehan, R. L., Davis, A. M., and Hall, E. L., Metall. Trans. A 14, 355 (1983).Google Scholar
10Wittmann, A., Burger, K. O., and Nowotny, H., Monatsh. Chem. 93, 674 (1962).Google Scholar
11Schiepers, R. C. J., van Loo, F. J. J., and With, G. D., J. Am. Ceram. Soc. 71, C284 (1988).Google Scholar
12Reed-Hill, R. E., Physical Metallurgy Principles (Brooks/Cole Eng. Div., Wadsworth Inc., California, 1973), p. 559.Google Scholar
13Janssen, M. M. P., Metall. Trans. 4, 1623 (1973).Google Scholar
14Barin, I., Knacke, O., and Kubaschewski, O., Thermochemical Properties of Inorganic Substances (Springer, New York, 1977), pp. 489 and 694.Google Scholar
15Barin, I., Knacke, O., and Kubaschewski, O., Thermochemical Properties of Inorganic Substances (Springer-Verlag, Berlin, Heidelberg, New York, 1977), p. 490.Google Scholar
16Joshi, A. and Wadsworth, J., High Temperature Interactions of Metallic Matrices with Ceramic Reinforcements, Annual Technical Report, Lockheed Research and Development Division, LMSC-F382003, 1990, p. 4–4.Google Scholar
17Pai, C. S., Hanson, C. M., and Lau, S. S., J. Appl. Phys. 57, 618 (1985).Google Scholar
18Chou, T. C., Scripta Metallurgica et Materialia 24 (1), 63 (1990).Google Scholar
19Chou, T. C., J. Mater. Res. 5, 601 (1990).Google Scholar